| Patent Number |
Title Of Patent |
Date Issued |
| 7553689 |
Semiconductor device with micro-lens and method of making the same |
June 30, 2009 |
| A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a sec |
| 7507596 |
Method of fabricating a high quantum efficiency photodiode |
March 24, 2009 |
| The present invention is CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless c |
| 7479403 |
Pinned photodiode integrated with trench isolation and fabrication method |
January 20, 2009 |
| A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped reg |
| 7145190 |
Pinned photodiode integrated with trench isolation and fabrication method |
December 5, 2006 |
| A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped reg |
| 7038232 |
Quantum efficiency enhancement for CMOS imaging sensor with borderless contact |
May 2, 2006 |
| The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless |
