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Lim; Sangwook
Yongin-si, KR
No. of patents:

Patent Number Title Of Patent Date Issued
8105930 Method of forming dielectric including dysprosium and scandium by atomic layer deposition and in January 31, 2012
In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with t
8034683 Method of forming a phase change material layer, method of forming a phase change memory device October 11, 2011
A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface
7855145 Gap filling method and method for forming semiconductor memory device using the same December 21, 2010
A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change m

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