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Liang; Jarrett Jun
San Francisco, CA
No. of patents:

Patent Number Title Of Patent Date Issued
8575000 Copper interconnects separated by air gaps and method of making thereof November 5, 2013
A semiconductor device including a plurality of copper interconnects. At least a first portion of the plurality of copper interconnects has a meniscus in a top surface. The semiconductor device also includes a plurality of air gaps, wherein each air gap of the plurality of air gaps i
8278203 Metal control gate formation in non-volatile storage October 2, 2012
Methods for fabricating control gates in non-volatile storage are disclosed. When forming stacks for floating gate memory cells and transistor control gates, a sacrificial material may be formed at the top of the stacks. After insulation is formed between the stacks, the sacrificial

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