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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Li; Min
Address:
Fremont, CA
No. of patents:
53
Patents:


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Patent Number Title Of Patent Date Issued
8564903 Writer with an AFM write gap October 22, 2013
A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antif
7864490 CPP head with parasitic shunting reduction January 4, 2011
The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment p
7477491 GMR device having an improved free layer January 13, 2009
It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high -10.sup.-6 to -10.sup.-5. This problem has been ov
7420780 Thin laminated single pole perpendicular write head September 2, 2008
Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antif
7400475 Patterned, synthetic longitudinally exchange biased GMR sensor July 15, 2008
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is
7279269 CPP head with parasitic shunting reduction October 9, 2007
The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment p
7262941 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom sp August 28, 2007
An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-
7184248 Synthetic pattern exchange configuration for side reading reduction February 27, 2007
A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagneti
7180712 Shield structure design to improve the stability of an MR head February 20, 2007
A method for forming a laminated shield to improve the stability and performance of an MR read head and the MR read head formed using that shield. The shield consists of two layers of ferromagnetic material separated by a layer of ruthenium, allowing the ferromagnetic layers to form
7170720 CPP read head for high density and shield noise suppression January 30, 2007
It is known that the magnetic shields, between which CPP GMR stacks are sandwiched, can be a source of AMR (anisotropic magneto-resistance) noise. This has been significantly reduced by coating both the magnetic shields with highly conductive layers. If the guidelines disclosed in the
7152304 Method for fabricating a patterned, synthetic transverse exchange biased GMR sensor December 26, 2006
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is
7134186 Method for fabricating a patterned, synthetic transversely exchanged biased GMR sensor November 14, 2006
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is
7130168 Synthetic free layer for CPP GMR October 31, 2006
Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making
7118680 Self-alignment scheme for enhancement of CPP-GMR October 10, 2006
A method for fabricating a current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type is provided, the method including an electron-beam lithographic process employing both primary and secondary electron absorption and first and second s
7075758 Supplementary shield for CPP GMR read head July 11, 2006
Increases in the AP1 and AP2 thickness cause the free layer to be off-center in a CPP magnetic read head. This problem has been overcome by inserting supplementary magnetic shields within the spin valve, located as close as possible to the stack. These supplementary shields enable the
7072151 Magnetic assist read track-width definition for a lead overlay top spin-valve GMR head July 4, 2006
A method for forming a top spin-valve SyAP GMR read sensor having a novel conductive lead overlay configuration and the sensor so formed. The lead overlay electrically contacts the sensor at a position within the SyAP pinned layer, thus simultaneously assuring improved electrical contact
7068478 CPP GMR read head June 27, 2006
Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to an overall improv
7064924 Thin laminated single pole perpendicular write head June 20, 2006
Single write poles tend to large shape anisotropy which results in a very large remnant field when not actually writing. This has now been eliminated by giving the write pole the form of a three layer laminate in which two ferromagnetic layers are separated by a non-magnetic or antif
7010848 Synthetic pattern exchange configuration for side reading reduction March 14, 2006
A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagneti
7006337 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane February 28, 2006
Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layer
6999286 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane February 14, 2006
Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layer
6998150 Method of adjusting CoFe free layer magnetostriction February 14, 2006
It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high -10.sup.-6 to -10.sup.-5. This problem has been ov
6989973 Spin filter bottom spin valve head with continuous spacer exchange bias January 24, 2006
A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/fr- ee layer/Cu/Ta or TaO/Al.sub.2O.sub.3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data
6987651 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane January 17, 2006
Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layer
6985337 Multilayered structures comprising magnetic nano-oxide layers for current perpendicular to plane January 10, 2006
Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layer
6972934 Synthetic anti-parallel spin valve with thin AFM layer for very high density application December 6, 2005
A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve
6962663 Process for manufacturing a read head November 8, 2005
A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al.sub.2 O.sub.3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data
6953601 Synthetic free layer for CPP GMR October 11, 2005
Reduction of the free layer thickness in GMR devices is desirable in order to meet higher signal requirements, besides improving the GMR ratio itself. However, thinning of the free layer reduces the GMR ratio and leads to poor thermal stability. This problem has been overcome by making
6943994 Design of canted synthetic pattern exchange spin valve head for improving stability and bias September 13, 2005
A GMR sensor comprising a sensor element having a spin valve configuration with a synthetic antiferromagnetic pinned layer and further comprising a ferromagnetic free layer biased by synthetic exchange biasing in a direction canted relative to the air bearing surface plane of the sensor.
6909583 FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin June 21, 2005
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of
6903904 CPP GMR synthetic spin valve enhancement June 7, 2005
In current synthetically pinned CPP SV designs, AP2 always makes a negative contribution to the device's GMR since its magnetization direction must be anti-parallel to the pinned layer (AP1). This effect has been reduced by replacing the conventional single layer AP2, that forms part of
6888707 Spin filter bottom spin valve head with continuous spacer exchange bias May 3, 2005
A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al.sub.2 O.sub.3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data
6888703 Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane May 3, 2005
Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. S
6857180 Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor February 22, 2005
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is
6775903 Method for fabricating a top magnetoresistive sensor element having a synthetic pinned layer August 17, 2004
A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve
6773515 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom sp August 10, 2004
A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly
6759084 Process to form NOL structure for CPP GMR July 6, 2004
It is important for a CPP GMR read head that it have both high resistance as well as high cross-sectional area. This has been achieved by inserting a NOL (nano-oxide layer) though the middle of one or both of the two non-magnetic conductive layers. A key feature is that the NOL is formed
6754048 Multiple magnetoresistive (MR) layer sensor element having longitudinal bias layers with non-par June 22, 2004
Within a method for forming a magnetoresistive (MR) sensor element there is first provided a substrate. There is then formed over the substrate a first magnetoresistive (MR) layer having formed contacting the first magnetoresistive (MR) layer a magnetically biased first magnetic bias
6729014 Magnetic assist read track-width definition for a lead overlay top spin-valve GMR head May 4, 2004
A method for forming a top spin-valve SyAP GMR read sensor having a novel conductive lead overlay configuration and the sensor so formed. The lead overlay electrically contacts the sensor at a position within the SyAP pinned layer, thus simultaneously assuring improved electrical contact
6697233 High density recording, dual stripe MR (DSMR) head for achieving anti-parallel exchange coupling February 24, 2004
A method of forming a DSMR head comprises the steps of forming a first ferromagnetic (FM) strip on a substrate with a first anti-FM (AFM) pinning layer over a portion of the first ferromagnetic strip, the first AFM pinning layer being composed of a first material. Then perform a first
6683762 CPP GMR device with inverse GMR material January 27, 2004
Pinned layers that are synthetically, rather than directly, pinned are desirable for a Current Perpendicular to Plane Spin Valve structure because they are more stable. However, this comes at the cost or reduced performance. The present invention solves this problem by modifying the
6630248 Synthetic anti-parallel/parallel/pinned layer spin valve October 7, 2003
A spin valve structure is described that has greater pinned layer robustness than is found in spin valves of the existing known art, making it well suited for use in high density recording. This has been achieved by a using a modified pinned layer that is a laminate of five layers--a
6620530 Synthetic anti-parallel spin valve, having improved robustness, and process to manufacture it September 16, 2003
A spin valve structure and a method for manufacturing it are described. The spin valve uses a modified pinned layer that consists of two cobalt iron layers separated by a layer of either ruthenium, iridium, or rhodium. A key feature of the invention is that this spacer layer is significa
6614630 Top spin valve heads for ultra-high recording density September 2, 2003
A method for fabricating a specularly reflecting top spin valve read head with an ultra-thin free layer that is capable of reading ultra-high density recordings. This top spin valve has a composite CoFe--NiFe free layer that is formed on a composite Ru--Cu buffer layer which provides
6581272 Method for forming a bottom spin valve magnetoresistive sensor element June 24, 2003
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of
6522507 Single top spin valve heads for ultra-high recording density February 18, 2003
A method for fabricating a single top spin valve head that is capable of reading ultra-high density recordings. Said top spin valve has a CoFe free layer for high GMR ratio, which is grown on a NiCr/Ru layer to provide better magnetic properties and has a ferromagnetically coupled Co
6517896 Spin filter bottom spin valve head with continuous spacer exchange bias February 11, 2003
A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al.sub.2 O.sub.3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data
6466418 Bottom spin valves with continuous spacer exchange (or hard) bias October 15, 2002
A method for forming a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element with continuous spacer exchange hard bias and a specularly reflecting bottom spin valve magnetoresistive (SVMR) sensor element fabricated according to that method. To practice the me
6396671 Ruthenium bias compensation layer for spin valve head and process of manufacturing May 28, 2002
A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the
6392853 Spin valve structure design with laminated free layer May 21, 2002
The giant magnetoresistance (GMR) effect includes a contribution that is due to anisotropic magnetoresistance (AMR). Unfortunately the AMR effect tends to degrade the peak-to-peak signal asymmetry. Additionally, a high AMR/GMR ratio causes a larger signal asymmetry variation. It is there
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