| Patent Number |
Title Of Patent |
Date Issued |
| 7554775 |
GMR sensors with strongly pinning and pinned layers |
June 30, 2009 |
| A giant magnetoresistance (GMR) sensor with strongly pinning and pinned layers is described for magnetic recording at ultrahigh densities. The pinning layer is an antiferromagnetic (AFM) iridium-manganese-chromium (Ir--Mn--Cr) film having a Mn content of approximately from 70 to 80 a |
| 7538988 |
Method and apparatus having improved magnetic read head sensors |
May 26, 2009 |
| A method and apparatus for an improved magnetic read sensor having synthetic or AP pinned layers with high resistance and high magnetoelastic anisotropy is disclosed. A pinned layer includes a cobalt-iron ternary alloy, where a third constituent of the cobalt-iron ternary alloy layer |
| 7446985 |
Epitaxial oxide cap layers for enhancing GMR performance |
November 4, 2008 |
| A magnetic head and magnetic storage system containing such a head, the head including a free layer and a layer of metal oxide substantially epitaxially formed relative to the free layer. Preferably, the layer of metal oxide is a crystalline structure, and is of ZnO. |
| 7408747 |
Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field anneali |
August 5, 2008 |
| An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably |
| 7382590 |
MR sensor and thin film media having alloyed Ru antiparallel spacer layer for enhanced antiparal |
June 3, 2008 |
| A magnetic head having a free layer and an antiparallel (AP) pinned layer structure spaced apart from the free layer. The AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each other, the pinned layers being separat |
| 7370404 |
Method for resetting pinned layer magnetization in a magnetoresistive sensor |
May 13, 2008 |
| A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second side surfaces of t |
| 7367109 |
Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment |
May 6, 2008 |
| A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co--Fe/Ru/Co--Fe, is described. The method determines a thickness of the first pinned layer which will yield the desired net magnetic moment for the pinned layers. A series of test struc |
| 7190557 |
Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers |
March 13, 2007 |
| A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first |
| 6846543 |
Thin film magnetic recording disk with ruthenium-aluminum layer |
January 25, 2005 |
| A magnetic thin film disk for use in a disk drive with a ruthenium-aluminum (RuAl) seed layer with B2 structure followed by a NiAl layer is described. The disk has reduced noise and increased squareness which results in improved recording performance in a disk drive utilizing the disk. T |
| 6413608 |
Seed layer and underlayer with high and low oxygen concentration portions for hand disk magnetic |
July 2, 2002 |
| The thin film magnetic disk of the present invention includes a non-metallic substrate having a seed layer deposited on the substrate, an underlayer deposited upon the seed layer composed of a chromium alloy having a relatively high oxygen concentration portion of from 2,000 ppm to 2 |
