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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Lensing; Kevin R.
Address:
Austin, TX
No. of patents:
39
Patents:












Patent Number Title Of Patent Date Issued
8149384 Method and apparatus for extracting dose and focus from critical dimension data April 3, 2012
A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is
8041518 Determining die test protocols based on process health October 18, 2011
A method includes receiving a first set of parameters associated with a subset of a plurality of die on a wafer. A die health metric is determined for at least a portion of the plurality of die based on the first set of parameters. The die health metric includes at least one process
7983871 Method and apparatus for employing previous test insertion results for testing a device July 19, 2011
A method includes determining at least a first characteristic of a device during a first test insertion and storing the first characteristic. The device is identified during a second test insertion. The first characteristic is retrieved responsive to the identification of the device.
7925369 Method and apparatus for optimizing models for extracting dose and focus from critical dimension April 12, 2011
A method includes defining a reference model of a system having a plurality of terms for modeling data associated with the system. A reference fit error metric is generated for the reference model. A set of evaluation models each having one term different than the reference model is
7822567 Method and apparatus for implementing scaled device tests October 26, 2010
A method includes defining a hierarchy of test routines in a test program for testing integrated circuit devices. A first device is tested at a first screening level in the hierarchy. The first device is tested at a second detailed level in the hierarchy responsive to the first device
7738986 Method and apparatus for compensating metrology data for site bias prior to filtering June 15, 2010
A method includes acquiring metrology data associated with a process. Bias information associated with the process is determined. The metrology data is adjusted based on the bias information to generate bias-adjusted metrology data. The bias-adjusted metrology data is filtered to identif
7716004 Method and apparatus for matching test equipment calibration May 11, 2010
A method includes collecting trace data associated with a plurality of device testers. Tester health metrics are generated for each of the device testers. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester hea
7519447 Method and apparatus for integrating multiple sample plans April 14, 2009
The present invention provides a method and apparatus for integrating multiple sample plans. The method includes receiving a first wafer state data set from an in situ wafer measurement device, the first wafer state data set being indicative of at least one characteristic of at least one
7502702 Method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities March 10, 2009
The present invention provides a method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities. The method includes accessing measurement information provided by a first measurement device and modifying a sensitivity of a second measurement device based on the
7337034 Method and apparatus for determining a root cause of a statistical process control failure February 26, 2008
The present invention provides a method and apparatus for determining a root cause of a fault. The method includes detecting at least one fault associated with at least one first wafer processed according to a first processing context and processing at least one second wafer according to
7282374 Method and apparatus for comparing device and non-device structures October 16, 2007
The present invention provides a method and apparatus for comparing device and non-device structures. The method includes determining at least one characteristic parameter associated with at least one non-device structure on at least one workpiece and determining at least one charact
7277824 Method and apparatus for classifying faults based on wafer state data and sensor tool trace data October 2, 2007
The present invention provides a method and apparatus for classifying faults. The method includes accessing wafer state data associated with at least one wafer processed by at least one processing tool and sensor tool trace data associated with the at least one processing tool and de
7262864 Method and apparatus for determining grid dimensions using scatterometry August 28, 2007
A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a wafer having a test
6980300 Method and apparatus for generating a polishing process endpoint signal using scatterometry December 27, 2005
A method for polishing wafers includes polishing a process layer formed on a wafer, the process layer overlying a grating structure; illuminating at least a portion of the process layer and the grating structure; measuring light reflected from the illuminated portion of the process layer
6933158 Method of monitoring anneal processes using scatterometry, and system for performing same August 23, 2005
The present invention is directed to several inventive methods of monitoring anneal processes performed on implant regions, and a system for accomplishing same. In one aspect, the method comprises forming a first plurality of implant regions in a semiconducting substrate, performing at
6927080 Structures for analyzing electromigration, and methods of using same August 9, 2005
The present invention is generally directed to various structures for analyzing electromigration, and methods of using same. In one illustrative embodiment, the method includes forming a grating structure above a semiconducting substrate, the grating structure being comprised of a pl
6881594 Method of using scatterometry for analysis of electromigration, and structures for performing sa April 19, 2005
The present invention is generally directed to various methods of using scatterometry for analysis of electromigration. In one illustrative embodiment, the method comprises forming a grating structure above a semiconducting substrate, the grating structure being comprised of a plural
6804014 Method and apparatus for determining contact opening dimensions using scatterometry October 12, 2004
A test structure includes a plurality of lines and a plurality of contact openings defined in the lines. A method for determining contact opening dimensions includes providing a wafer having a test structure comprising a plurality of lines and a plurality of contact openings defined in t
6785009 Method of using high yielding spectra scatterometry measurements to control semiconductor manufa August 31, 2004
A method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes and systems for accomplishing same is disclosed. In one embodiment, the method comprises providing a library comprised of at least one target optical characteristic tra
6774998 Method and apparatus for identifying misregistration in a complimentary phase shift mask process August 10, 2004
A method includes providing a wafer having a first grating structure and a second grating structure formed in a photoresist layer. At least a portion of the first and second grating structures is illuminated with a light source. Light reflected from the illuminated portion of the first a
6766215 Method and apparatus for detecting necking over field/active transitions July 20, 2004
A method and an apparatus for detecting a necking error during semiconductor manufacturing. At least one semiconductor wafer is processed. Metrology data from the processed semiconductor wafer is acquired. Data from a reference library comprising optical data relating to a poly-silic
6746882 Method of correcting non-linearity of metrology tools, and system for performing same June 8, 2004
The present invention is generally directed to various methods of correcting non-linearity in metrology tools, and a system for performing same. In one illustrative embodiment, the method comprises creating a non-linear model of measurement data produced by a metrology tool when meas
6716646 Method and apparatus for performing overlay measurements using scatterometry April 6, 2004
The present invention provides for a method and an apparatus for overlay measurements using optical techniques. At least one semiconductor device is processed. Metrology data from the processed semiconductor device is acquired. A scatterometry overlay analysis based upon the metrology da
6707562 Method of using scatterometry measurements to control photoresist etch process March 16, 2004
The present invention is generally directed to a method of using scatterometry measurements to control the photoresist etch process. In one embodiment, the method comprises forming at least one grating structure in a layer of photoresist material, the grating structure being comprised of
6660543 Method of measuring implant profiles using scatterometric techniques wherein dispersion coeffici December 9, 2003
The present invention is directed to several inventive methods for characterizing implant profiles. In one embodiment, the method comprises providing a semiconducting substrate, forming a first plurality of implant regions in the substrate, and illuminating at least one of the first
6657716 Method and apparatus for detecting necking over field/active transitions December 2, 2003
A method and an apparatus for detecting a necking error during semiconductor manufacturing. At least one semiconductor wafer is processed. Metrology data from the processed semiconductor wafer is acquired. Data from a reference library comprising optical data relating to a poly-silic
6650423 Method and apparatus for determining column dimensions using scatterometry November 18, 2003
A test structure includes a plurality of trenches and a plurality of columns defined in the trenches. A method for determining column dimensions includes providing a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches; i
6643008 Method of detecting degradation in photolithography processes based upon scatterometric measurem November 4, 2003
The present invention is generally directed to various methods of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures. In one embodiment, the method comprises providing a wafer compr
6630362 Method and apparatus for performing trench depth analysis October 7, 2003
A method and an apparatus for performing trench depth analysis in semiconductor device manufacturing. A first processing on at least one semiconductor wafer is performed. Optical trench data is acquired from the processed semiconductor wafer. An optical trench analysis, based upon the
6625514 Method and apparatus for optical lifetime tracking of trench features September 23, 2003
A method and an apparatus for performing process lifetime tracking of trench feature using optical analysis. A plurality of process steps is performed on a first set of semiconductor wafers. A manufacturing lifetime tracking of trench features is performed. A feedback corrective process
6597447 Method and apparatus for periodic correction of metrology data July 22, 2003
A method and an apparatus for performing periodic correction of metrology data. At least one semiconductor wafer is processed. Metrology data from the processed semiconductor wafer is acquired. At least one test wafer is processed. Test wafer metrology data from the processed test wafer
6582863 Method of controlling photolithography processes based upon scatterometric measurements of sub-n June 24, 2003
The present invention is generally directed to a method of controlling photolithography processes based upon scatterometric measurements of sub-nominal grating structures, and a system for accomplishing same. In one embodiment, the method comprises providing a library of optical char
6562635 Method of controlling metal etch processes, and system for accomplishing same May 13, 2003
A method of using scatterometry measurements to determine and control conductive interconnect profiles is disclosed. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which correspond to a grating structure comprised of a plurality
6537833 Method and apparatus for characterizing an interconnect structure profile using scatterometry me March 25, 2003
A method for characterizing an interconnect structure profile includes providing a wafer having a grating structure including a plurality of interconnect structures; illuminating at least a portion of the grating structure; measuring light reflected from the grating structure to gene
6464563 Method and apparatus for detecting dishing in a polished layer October 15, 2002
A method for polishing wafers includes providing a wafer having a grating structure including a trench and a process layer formed in the trench; illuminating at least a portion of the process layer and the grating structure with a light source; measuring light reflected from the illu
6458610 Method and apparatus for optical film stack fault detection October 1, 2002
A method and an apparatus for performing film stack fault detection. At least one semiconductor wafer is processed. Metrology data from the processed semiconductor wafer is acquired. Data from a reference library comprising optical data relating to a film stack on the semiconductor w
6451700 Method and apparatus for measuring planarity of a polished layer September 17, 2002
A method for polishing wafers includes providing a wafer having a grating structure and a process layer formed over the grating structure; illuminating at least a portion of the process layer and the grating structure with a light source; measuring light reflected from the illuminate
6433871 Method of using scatterometry measurements to determine and control gate electrode profiles August 13, 2002
A method of using scatterometry measurements to determine and control gate electrode profiles is disclosed. In one embodiment, the method comprises providing a library of optical characteristic traces, each of which correspond to a grating structure comprised of a plurality of gate e
6383824 Method of using scatterometry measurements to control deposition processes May 7, 2002
The present invention is directed to a method of using scatterometry measurements to control deposition processes, and a system for accomplishing same. In one embodiment the method comprises forming at least one grating structure above a substrate, performing a deposition process to










 
 
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