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Inventor: Lee; Poongyeub
Address: Cupertino, CA
No. of patents: 4
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7554860 |
Nonvolatile memory integrated circuit having assembly buffer and bit-line driver, and method of |
June 30, 2009 |
| An assembly buffer and bitline driver circuit has two inverters cross-coupled to form an assembly buffer. A high-voltage latch is formed from cross-coupled high-voltage inverters. A first low-voltage n-channel MOS transistors is coupled to the high-voltage latch to selectively ground |
| 7532035 |
Address transition detector for fast flash memory device |
May 12, 2009 |
| An address transition detector circuit includes an input node, an output node, a bandgap reference node, and P.sub.bias and N.sub.bias nodes having voltages derived from the bandgap reference node. First through fifth cascaded inverters are each powered by a p-channel and n-channel M |
| 7342832 |
Bit line pre-settlement circuit and method for flash memory sensing scheme |
March 11, 2008 |
| A flash memory array includes a reference bit line on which a reference current is imposed. During read operation, bit lines selected for reading are connected to current-to-voltage converters, each of which generates an output voltage based upon the input current flowing in the bit line |
| 7268589 |
Address transition detector for fast flash memory device |
September 11, 2007 |
| An address transition detector circuit includes an input node, an output node, a bandgap reference node, and P.sub.bias and N.sub.bias nodes having voltages derived from the bandgap reference node. First through fifth cascaded inverters are each powered by a p-channel and n-channel M |
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