| Patent Number |
Title Of Patent |
Date Issued |
| 7563673 |
Method of forming gate structure of semiconductor device |
July 21, 2009 |
| Disclosed herein is a method for forming a gate structure of a semiconductor device. The method comprises forming a plurality of gates including a first gate dielectric film, a first gate conductive film, and a gate silicide film sequentially stacked on a silicon substrate having a f |
| 7554106 |
Partial ion implantation apparatus and method using bundled beam |
June 30, 2009 |
| An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the |
| 7538003 |
Method for fabricating MOS transistor |
May 26, 2009 |
| A method for fabricating a metal oxide semiconductor (MOS) transistor comprises forming a source region of a first conductivity type and a drain region of the first conductivity type, which are separated from each other by a channel region, in upper regions of a semiconductor substra |
| 7529116 |
Memory device having a threshold voltage switching device and a method for storing information i |
May 5, 2009 |
| Disclosed herein is a memory device having an increased level of integration with a simplified method of manufacture. The memory device includes: a plurality of word lines and a plurality of bit lines each regularly arranged, and a plurality of unit memory cells each formed at an int |
| 7511337 |
Recess gate type transistor |
March 31, 2009 |
| A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gat |
| 7488959 |
Apparatus and method for partial ion implantation |
February 10, 2009 |
| Disclosed herein is an apparatus and method for partial ion implantation. The apparatus includes a wafer support, an ion beam irradiator capable of generating and irradiating an ion beam entering the wafer, and an ion beam exposure adjustor to adjust exposure of the wafer with respect to |
| 7442946 |
Nonuniform ion implantation apparatus and method using a wide beam |
October 28, 2008 |
| A nonuniform ion implantation apparatus comprises a wide ion beam generator for generating a wide ion beam including a plurality of wide ion beams irradiated on at least two sections among a plurality of sections into which a wafer is divided, and a wafer drive unit for vertically re |
| 7365406 |
Non-uniform ion implantation apparatus and method thereof |
April 29, 2008 |
| A non-uniform ion implantation apparatus comprises a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate at least two regions on the entire area of a wafer, and a wafer rotating device configured to rotate the wafer in a predetermined direction w |
| 7351627 |
Method of manufacturing semiconductor device using gate-through ion implantation |
April 1, 2008 |
| Disclosed herein is a method of manufacturing a semiconductor device via gate-through ion implantation, comprising forming a gate stack on a semiconductor substrate and performing ion implantation for control of the threshold voltage and junction ion implantation for formation of sou |
| 7332772 |
Semiconductor device having a recessed gate and asymmetric dopant regions and method of manufact |
February 19, 2008 |
| A semiconductor device, having a recessed gate and asymmetric dopant regions, comprises a semiconductor substrate having a trench with a first sidewall and a second sidewall, the heights of which are different from each other, a gate insulating layer pattern disposed on the semiconductor |
| 7186631 |
Method for manufacturing a semiconductor device |
March 6, 2007 |
| Provided is a method for manufacturing a semiconductor device comprising forming a device isolation layer on a semiconductor substrate; forming gate insulating layers on the upper part of the semiconductor substrate having the device isolation layers formed thereon; forming an undoped |
| 7049248 |
Method for manufacturing semiconductor device |
May 23, 2006 |
| The present invention discloses a method for manufacturing semiconductor device wherein a cleaning process of a buffer layer is performed prior to a formation of a nitride film. The cleaning process allows to maintain the deposition thickness of the nitride film even when the time betwee |
| 6974745 |
Method of manufacturing semiconductor device |
December 13, 2005 |
| Disclosed is a method of manufacturing semiconductor devices, which can improve electrical characteristics of semiconductor devices. The method of manufacturing comprises the following steps of: forming a plurality of gates on a semiconductor substrate; forming an insulation layer on an |
