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Lee; Kyu Seok
Daejeon, KR
No. of patents:

Patent Number Title Of Patent Date Issued
7964882 Nitride semiconductor-based light emitting devices June 21, 2011
A nitride semiconductor-based light emitting device is provided. The nitride semiconductor-based light emitting device is formed of a nitride semiconductor having a wurtzite lattice structure with the Ga face. The device has a substrate, a buffer layer, a first p-type contact layer, a
6864510 Nitride semiconductor field effect transistor (FET) and method of fabricating the same March 8, 2005
Provided are a nitride semiconductor field effect transistor (FET) and a method of fabricating the nitride semiconductor FET. The nitride semiconductor FET includes a first semiconductor layer, a second semiconductor layer, a two-dimensional electron gas layer, a T-shaped gate, and a
6055087 Photo-induced electro-optic oscillator using a multiple quantum well pin diode April 25, 2000
A photo-induced electro-optic oscillator using a multiple quantum well structure PIN diode using a negative resistance characteristic of a photocurrent-voltage is disclosed. The present invention can generate the modulated optical signal as well as the electrical AC signal of a high
5790579 Semiconductor laser device for pulse laser oscillation August 4, 1998
A pulsed semiconductor laser has a lower threshold current and a more stable pulse train. The structure includes a saturable absorber section has a quantum well structure for laser oscillation, a gain section, a phase control section, and a super structure grating-distributed Bragg r
5497393 Semiconductor laser with super structure grating distributed Bragg reflector March 5, 1996
Disclosed is a semiconductor laser with a super structure grating DBR capable of generating a pulse train of from several hundred giga Hz to several tera Hz, comprising a saturable absorber section, a gain section, a phase control section and an super structure grating distributed Bragg

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