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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Lee; Ki Lyoung
Address:
Hwaseong-si, KR
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
8129094 Method for manufacturing a semiconductor device March 6, 2012
A spacer is formed on side and top portions of a photoresist pattern after a mask process is performed so that the spacer may be used as an etching mask. The spacer is formed using a polymer deposition layer which is a low temperature oxide or nitride that can be deposited on side and
7994050 Method for forming dual damascene pattern August 9, 2011
A method for forming a dual damascene pattern includes preparing a multi-functional hard mask composition including a silicon resin as a base resin, wherein the silicon resin comprises about 20 to 45% silicon molecules by weight, based on a total weight of the resin; forming a deposi
7989145 Method for forming fine pattern of semiconductor device August 2, 2011
A method for forming a fine pattern of a semiconductor device comprises forming a spin-on-carbon layer over an underlying layer, forming an anti-reflection pattern including a silicon containing polymer with a first etching mask pattern, forming a photoresist pattern including a sili
7811929 Method for forming dual damascene pattern October 12, 2010
A method for forming a dual damascene pattern includes preparing a multi-functional hard mask composition including a silicon resin as a base resin; forming a deposition structure including a self-arrangement contact insulation film, a first dielectric film, an etching barrier film,
7718530 Method for manufacturing semiconductor device May 18, 2010
A method for manufacturing a semiconductor device includes forming a gate conductive layer, a first mask layer, a second mask layer, and a third mask layer over a semiconductor substrate that includes a cell region and a peripheral region. The method also includes forming a second mask
7576009 Method for forming fine pattern of semiconductor device August 18, 2009
A method for forming a fine pattern of a semiconductor device comprises forming a deposition pattern including first, second, and third mask patterns over a semiconductor substrate having an underlying layer, side-etching the second mask pattern with the third mask pattern as an etch
7396751 Method for manufacturing semiconductor device July 8, 2008
A method for manufacturing a semiconductor device includes forming a second storage node contact hole with a mask for storage node and securing an overlay margin between a storage node contact hole and a storage node with a hard mask layer that serves as a hard mask as well as an ant










 
 
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