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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Lee; Jung Il
Address:
Yong-In, KR
No. of patents:
2
Patents:












Patent Number Title Of Patent Date Issued
6884705 Semiconductor device having hetero grain stack gate and method of forming the same April 26, 2005
A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate insulating layer, wherein the ga
6667525 Semiconductor device having hetero grain stack gate December 23, 2003
A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate insulating layer, wherein the ga










 
 
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