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Lee; Ho Seok
Gyeonggi-do, KR
No. of patents:

Patent Number Title Of Patent Date Issued
6838369 Method for forming contact hole of semiconductor device January 4, 2005
A method for forming a contact hole of a semiconductor device, wherein a polymer residual on a bottom surface of the contact hole is treated with plasma of mixture gas containing oxygen to convert the polymer residual into a pure silicon oxide film free of carbon and fluorine for easy

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