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Inventor: Lee; Ho Seok
Address: Gyeonggi-do, KR
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6838369 |
Method for forming contact hole of semiconductor device |
January 4, 2005 |
| A method for forming a contact hole of a semiconductor device, wherein a polymer residual on a bottom surface of the contact hole is treated with plasma of mixture gas containing oxygen to convert the polymer residual into a pure silicon oxide film free of carbon and fluorine for easy |
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