| Patent Number |
Title Of Patent |
Date Issued |
| 7402364 |
Semiconductor device with loop line pattern structure, method and alternating phase shift mask f |
July 22, 2008 |
| An alternating phase shift mask with dark loops thereon, a memory array fabricated with the alternating phase shift mask, and a method of fabricating the memory. The dark loops in the mask always separate first regions with 180.degree. phase difference from second regions with 0.degr |
| 7087947 |
Semiconductor device with loop line pattern structure, method and alternating phase shift mask f |
August 8, 2006 |
| An alternating phase shift mask with dark loops thereon, a memory array fabricated with the alternating phase shift mask, and a method of fabricating the memory. The dark loops in the mask always separate first regions with 180.degree. phase difference from second regions with 0.degr |
| 6828615 |
Vertical internally-connected trench cell (V-ICTC) and formation method for semiconductor memory |
December 7, 2004 |
| A dynamic random access memory (DRAM) device having a vertical transistor and an internally-connected strap (ICS) to connect the transistor to the capacitor. The ICS makes no direct contact with the substrate. The DRAM cell operates at a substantially lower cell capacitance than that req |
| 6818515 |
Method for fabricating semiconductor device with loop line pattern structure |
November 16, 2004 |
| An alternating phase shift mask with dark loops thereon, a memory array fabricated with the alternating phase shift mask, and a method of fabricating the memory. The dark loops in the mask always separate first regions with 180.degree. phase difference from second regions with 0.degr |
| 6770954 |
Semiconductor device with SI-GE layer-containing low resistance, tunable contact |
August 3, 2004 |
| The present invention provides a semiconductor device in which a low resistance, tunable contact is formed by means of using a Si.sub.x Ge.sub.1-x (0<x<1) layer. Thus, only moderate doping is required, which in turn protects the device from short channel effect and leakage. The |
| 6703279 |
Semiconductor device having contact of Si-Ge combined with cobalt silicide |
March 9, 2004 |
| The present invention provides a metal contact of SiGe combined with cobalt silicide and cobalt. The contact resistance is greatly lowered due to both the low Schottky Barrier Height of SiGe and the low sheet resistance of cobalt silicide. The cobalt layer can serve as a glue layer and d |
| 6566190 |
Vertical internally-connected trench cell (V-ICTC) and formation method for semiconductor memory |
May 20, 2003 |
| A dynamic random access memory (DRAM) device having a vertical transistor and an internally-connected strap (ICS) to connect the transistor to the capacitor. The ICS makes no direct contact with the substrate. The DRAM cell operates at a substantially lower cell capacitance than that req |
| 6544888 |
Advanced contact integration scheme for deep-sub-150 nm devices |
April 8, 2003 |
| An advanced contact integration technique for deep-sub-150 nm semiconductor devices such as W/WN gate electrodes, dual work function gates, dual gate MOSFETs and SOI devices. This technique integrates self-aligned raised source/drain contact processes with a process employing a W-Salicid |
| 6521956 |
Semiconductor device having contact of Si-Ge combined with cobalt silicide |
February 18, 2003 |
| The present invention provides a metal contact of SiGe combined with cobalt silicide and cobalt. The contact resistance is greatly lowered due to both the low Schottky Barrier Height of SiGe and the low sheet resistance of cobalt silicide. The cobalt layer can serve as a glue layer and d |
| 6511905 |
Semiconductor device with Si-Ge layer-containing low resistance, tunable contact |
January 28, 2003 |
| The present invention provides a semiconductor device in which a low resistance, tunable contact is formed by means of using a Si.sub.x Ge.sub.1-x (0<x<1) layer. Thus, only moderate doping is required, which in turn protects the device from short channel effect and leakage. The |
