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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Ladd; John
Address:
Boise, ID
No. of patents:
13
Patents:












Patent Number Title Of Patent Date Issued
8278131 Method and apparatus for dark current and blooming supression in 4T CMOS imager pixel October 2, 2012
A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period.
8077236 Method and apparatus providing reduced metal routing in imagers December 13, 2011
An imaging device and method for operating the device. The imaging device comprises a pixel array having a plurality of pixels arranged in rows and columns. At least one pixel of the array comprises a photosensor and a first reset circuit responsive to a first reset control signal for
8021908 Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel September 20, 2011
A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period.
7969494 Imager and system utilizing pixel with internal reset control and method of operating same June 28, 2011
A pixel having no dedicated reset control line. By using the voltage on the column line to control the gate of the reset transistor, there is no need to provide a dedicate reset control line.
7920193 Methods, systems and apparatuses using barrier self-calibration for high dynamic range imagers April 5, 2011
Methods, systems and apparatuses proving a high dynamic range imager. Multiple photosensor integration periods are used to capture pixel signal information. A transistor gate is used to remove electrons from the photosensor between the two successive integration periods providing a n
7851798 Method and apparatus for dark current and blooming suppression in 4T CMOS imager pixel December 14, 2010
A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period.
7808063 Structure and method for FPN reduction in imaging devices October 5, 2010
Imaging devices having reduced fixed pattern noise are disclosed. The fixed pattern noise in the imaging devices is reduced by measuring and adjusting the spectral characteristics of the imager device on a pixel by pixel basis. The fixed pattern noise of the pixel cells are changed by
7704782 Method of forming pixel cells with color specific characteristics April 27, 2010
Imager devices having an array of photosensors, each photosensor having at least two doped regions. The two doped regions are each independently tailored to a particular wavelength.
7696597 Split transfer gate for dark current suppression in an imager pixel April 13, 2010
A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration pe
7663167 Split transfer gate for dark current suppression in an imager pixel February 16, 2010
A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration pe
7642107 Split transfer gate for dark current suppression an imager pixel January 5, 2010
A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration pe
7619671 Method, apparatus and system for charge injection suppression in active pixel sensors November 17, 2009
A method and apparatus are provided for operation of an image sensor during signal readout. During a reset operation the gate of a reset transistor coupled to the storage node receives a voltage greater than a threshold voltage to produce a reset of the storage node. During a period
7538304 Reducing noise in an imager by sampling signals with a plurality of capacitances connected to an May 26, 2009
A method of operating an imager to have increased capacitance on a pixel output or column output line during most reset signal and pixel signal sampling operations from the line. The increased capacitance is achieved by switching in multiple sample and hold capacitors during the sampling










 
 
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