| Patent Number |
Title Of Patent |
Date Issued |
| 7855413 |
Diode with low resistance and high breakdown voltage |
December 21, 2010 |
| A transistor and diode having a low resistance and a high breakdown voltage are provided. When the bottom portion of a narrow trench having the shape of a rectangular parallelepiped is filled with a semiconductor grown by epitaxial method, a {1 0 0} plane is exposed at the sidewalls of |
| 7365391 |
Semiconductor device and method for manufacturing thereof |
April 29, 2008 |
| A semiconductor device having high withstand voltage is provided. An active groove 22a includes a long and narrow main groove part 26 and a sub groove part 27 connected to a longitudinal side surface of the main groove part, and a buried region 24 of a second conductivity type whose |
| 7230298 |
Transistor having narrow trench filled with epitaxially-grown filling material free of voids |
June 12, 2007 |
| A transistor and diode having a low resistance and a high breakdown voltage are provided. When the bottom portion of a narrow trench having the shape of a rectangular parallelepiped is filled with a semiconductor grown by epitaxial method, a {1 0 0} plane is exposed at the sidewalls of |
| 7208375 |
Semiconductor device |
April 24, 2007 |
| A technique for improving a ruggedness of a transistor against breakdown is provided. In a transistor of the present invention, a height of filling regions is higher than that of buried regions, so that a withstanding voltage of the filling regions is higher than that of the buried r |
| 7196376 |
Trench-type power MOSFET with embedded region at the bottom of the gate and increased breakdown |
March 27, 2007 |
| An active groove filled region 23a is kept at a portion of an active groove 22a connecting to an embedded region 24 positioned below a gate groove 83. The active groove filled region 23a connects to a source electrode film 58a so as to have the same electric potential as a source reg |
| 6906355 |
Semiconductor device |
June 14, 2005 |
| A semiconductor device having guard grooves uniformly filled with a semiconductor filler is provided. The four corners of a rectangular ring-shaped guard groove meet at right angles, and outer and inner auxiliary diffusion regions both rounded are connected to the four corners. Since |
| 6876034 |
Semiconductor device having active grooves |
April 5, 2005 |
| A semiconductor device having grooves uniformly filled with semiconductor fillers is provided. Both ends of each of narrow active grooves are connected to an inner circumferential groove surrounding the active grooves. The growth speed of semiconductor fillers on both ends of the act |
| 6841825 |
Semiconductor device |
January 11, 2005 |
| A technique for improving a ruggedness of a transistor against breakdown is provided. In a transistor of the present invention, a height of filling regions is higher than that of buried regions, so that a withstanding voltage of the filling regions is higher than that of the buried regio |
