| Patent Number |
Title Of Patent |
Date Issued |
| 7776691 |
Semiconductor memory device and manufacturing method for semiconductor device |
August 17, 2010 |
| The object is simplification of a manufacturing process for nonvolatile memory by reducing additional processes for forming a charge storage structure, and downsizing of nonvolatile memory. The solution is a manufacturing method for semiconductor memory device including a process for |
| 7732783 |
Ultraviolet light monitoring system |
June 8, 2010 |
| An ultraviolet light monitoring system includes first and second electrodes, an evaluation subject film and a power source. The first and second electrodes are opposingly disposed and attract holes which are generated in accordance with irradiation of ultraviolet light. The evaluatio |
| 7714370 |
Semiconductor storage device having an SOI structure |
May 11, 2010 |
| A semiconductor storage device includes: a MOSFET formed on an SOI layer of the transistor forming region; and a MOS capacitor formed on the SOI layer of the capacitor forming region. The MOSFET includes: a gate insulating film formed; a floating gate electrode; a source layer and a |
| 7462896 |
Semiconductor memory device and manufacturing method for semiconductor memory device |
December 9, 2008 |
| The object is simplification of a manufacturing process for nonvolatile memory by reducing additional processes for forming a charge storage structure, and downsizing of nonvolatile memory. The solution is a manufacturing method for semiconductor memory device including a process for |
| 7199030 |
Method of manufacturing semiconductor device |
April 3, 2007 |
| An impurity is ion-implanted with a silicon nitride film formed on a silicon substrate as a mask film to form a source/drain layer of a MOS transistor. Heat treatment for activating the impurity is done as it is without removing the silicon nitride film to thereby produce heat treatm |
| 6507521 |
Semiconductor memory system |
January 14, 2003 |
| A pulse voltage with its frequency set at approximately 1 MHz and achieving a level of approximately 1V on the high level side and a level of -5.about.-7V on the low level side is applied to the P-type well 123. When 1V is applied to a P-type well 123, the resulting forward bias causes |
| 6434047 |
Semiconductor memory system |
August 13, 2002 |
| A pulse voltage with its frequency set at approximately 1 MHz and achieving a level of approximately 1V on the high level side and a level of -5.about.-7V on the low level side is applied to the P-type well 123. When 1V is applied to a P-type well 123, the resulting forward bias causes |
| 6383866 |
Semiconductor device and manufacturing method thereof |
May 7, 2002 |
| A Si.sub.3 N.sub.4 film and a side wall are provided on an electrode to obtain a Cs capacitor capable of enlarging an area of a memory cell contact of a DRAM, and a hole if formed penetrating an inter-layer film by a selective etching process. The Si.sub.3 N.sub.4 film and the side wall |
| 6356479 |
Semiconductor memory system |
March 12, 2002 |
| A pulse voltage with its frequency set at approximately 1 MHz and achieving a level of approximately 1V on the high level side and a level of -5.about.-7V on the low level side is applied to the P-type well 123. When 1V is applied to a P-type well 123, the resulting forward bias causes |
| 5856694 |
Semiconductor device having protection device for preventing the electrostatic breakdown of outp |
January 5, 1999 |
| A semiconductor device of the present invention includes an integrated circuit formed on a first conduction-type semiconductor substrate, an output buffer circuit for outputting a signal obtained from the integrated circuit, a protection circuit for protecting the output buffer circuit a |
| 5739571 |
Semiconductor device having protection device for preventing the electrostatic breakdown of outp |
April 14, 1998 |
| A semiconductor device of the present invention includes an integrated circuit formed on a first conduction-type semiconductor substrate, an output buffer circuit for outputting a signal obtained from the integrated circuit, a protection circuit for protecting the output buffer circuit a |
