| |
|
Inventor: Kurabayashi; Toru
Address: Miyagi, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 5338389 |
Method of epitaxially growing compound crystal and doping method therein |
August 16, 1994 |
| In a method of epitaxially growing a compound crystal, a plurality of crystal component gasses of a compound and reaction gas chemically reacting with the crystal component gasses are individually directed, in the predetermined order, onto a substrate crystal heated under vacuum. The |
|
|
|
