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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kumamaru; Kuniaki
Address:
Yokohama, JP
No. of patents:
3
Patents:












Patent Number Title Of Patent Date Issued
5399511 Method of manufacturing a hetero bipolar transistor March 21, 1995
The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side
5365090 Hetero bipolar transistor and method of manufacturing the same November 15, 1994
The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side
5127989 Method of forming a thin film pattern with a trapezoidal cross section July 7, 1992
The present invention provides a method of forming a thin film pattern with a trapezoidal cross section. In this method, a resist pattern with an inverted-trapezoidal cross section is formed on a thin film. Using the resist pattern with the inverted-trapezoidal cross section as a mask, t










 
 
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