| Patent Number |
Title Of Patent |
Date Issued |
| 7557073 |
Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist |
July 7, 2009 |
| A method and composition for removing ion-implanted photoresist from semiconductor substrates having such photoresist is described. The removal composition contains supercritical CO.sub.2 (SCCO.sub.2), a co-solvent and a reducing agent for use in removing ion-implanted photoresist. S |
| 7553803 |
Enhancement of silicon-containing particulate material removal using supercritical fluid-based c |
June 30, 2009 |
| A method and composition for removing silicon-containing particulate material, such as silicon nitrides and silicon oxides, from patterned Si/SiO.sub.2 semiconductor wafer surfaces is described. The composition includes a supercritical fluid (SCF), an etchant species, a co-solvent, a |
| 7517809 |
Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
April 14, 2009 |
| A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a |
| 7223352 |
Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch resid |
May 29, 2007 |
| A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO.sub.2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, |
| 7160815 |
Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
January 9, 2007 |
| A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a |
| 7119418 |
Supercritical fluid-assisted deposition of materials on semiconductor substrates |
October 10, 2006 |
| Supercritical fluid-assisted deposition of materials on substrates, such as semiconductor substrates for integrated circuit device manufacture. The deposition is effected using a supercritical fluid-based composition containing the precursor(s) of the material to be deposited on the |
| 7119052 |
Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers |
October 10, 2006 |
| A composition including supercritical fluid and at least one additive selected from fluoro species, and primary and/or secondary amines, optionally with co-solvent, low k material attack-inhibitor(s) and/or surfactant(s). The composition has particular utility for cleaning of semicon |
| 6989358 |
Supercritical carbon dioxide/chemical formulation for removal of photoresists |
January 24, 2006 |
| A photoresist cleaning composition for removing photoresist and ion implanted photoresist from semiconductor substrates. The cleaning composition contains supercritical CO.sub.2 (SCCO2) and alcohol for use in removing photoresist that is not ion-implanted. When the photoresist has be |
| 6943139 |
Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbo |
September 13, 2005 |
| A cleaning composition for cleaning particulate contamination from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO.sub.2 (SCCO2), alcohol, fluoride source and, optionally, hydroxyl additive. Such cleaning composition overcomes the intrinsi |
| 6735978 |
Treatment of supercritical fluid utilized in semiconductor manufacturing applications |
May 18, 2004 |
| A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the |
