| Patent Number |
Title Of Patent |
Date Issued |
| 7538849 |
Active matrix display and forming method thereof |
May 26, 2009 |
| An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus |
| 7518146 |
EL display device including color filter and light shielding film |
April 14, 2009 |
| Plurality of pixels (102) are arranged on the substrate. Each of the pixels (102) is provided with an EL element which utilizes as a cathode a pixel electrode (105) connected to a current control TFT (104). On a counter substrate (110), a light shielding film (112) is disposed at the |
| 7482631 |
Film formation apparatus and film formation method |
January 27, 2009 |
| There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impur |
| 7462501 |
Method for manufacturing an electro-optical device |
December 9, 2008 |
| An object of the present invention is to provide an EL display device having high operation performance and reliability.A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali m |
| 7462372 |
Light emitting device, method of manufacturing the same, and thin film forming apparatus |
December 9, 2008 |
| A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material e |
| 7453095 |
Light emitting device and manufacturing method thereof |
November 18, 2008 |
| An element structure is provided in which film formation irregularities and deterioration of an organic compound layer formed on an electrode are prevented in an active matrix light emitting device. After forming an insulating film so as to cover edge portions of a conductor which become |
| 7393707 |
Method for manufacturing an electro-optical device |
July 1, 2008 |
| An object of the present invention is to provide an EL display device having high operation performance and reliability.A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali m |
| 7317282 |
Self light-emitting device |
January 8, 2008 |
| To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a cathode (101), a |
| 7288420 |
Method for manufacturing an electro-optical device |
October 30, 2007 |
| An object of the present invention is to provide an EL display device having high operation performance and reliability.A third passivation film 45 is disposed under the EL element 203 comprising a pixel electrode (anode) 46, an EL layer 47 and a cathode 48, and diffusion of alkali m |
| 7279752 |
Display device using electroluminescence material |
October 9, 2007 |
| There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is |
| 7227603 |
Liquid-crystal electro-optical apparatus and method of manufacturing the same |
June 5, 2007 |
| A liquid crystal device comprising: a pair of substrates having an electrode arrangement thereon; an orientation control means provided on at least one of said substrates; and a ferroelectric or antiferroelectric liquid crystal layer interposed between said substrates, said liquid |
| 7208765 |
Electronic device |
April 24, 2007 |
| To provide an electronic device capable of bright image display. A pixel is structured such that a switching TFT and a current controlling TFT are formed on a substrate and an EL element is electrically connected to the current controlling TFT. A gate capacitor formed between a gate elec |
| 7147530 |
Electroluminescence display device and method of manufacturing the same |
December 12, 2006 |
| An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed so as to be in contact with an EL element 203 which comprises a pixel electrode (anode) 46, an EL layer 47 and a cath |
| 7132693 |
Self-light-emitting device and method of manufacturing the same |
November 7, 2006 |
| Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure |
| 7112115 |
Light emitting device and method of manufacturing the same |
September 26, 2006 |
| Technology to reduce the manufacturing cost of a manufacturing process of a light emitting device is provided. The manufacturing cost of a device using a light emitting element can be reduced by using a multilayout process for forming a plurality of light emitting devices from a larg |
| 6980275 |
Electro-optical device |
December 27, 2005 |
| A highly reliable liquid crystal display device in which the drive circuit region is protected, which comprises a first substrate having thereon a display region and a drive circuit region comprising a drive circuit for controlling the display in said display region and a second substrat |
| 6956240 |
Light emitting device |
October 18, 2005 |
| In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an organic compound layer and |
| 6906383 |
Semiconductor device and method of manufacture thereof |
June 14, 2005 |
| There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurit |
| 6905907 |
Light emitting device and manufacturing method thereof |
June 14, 2005 |
| An element structure is provided in which film formation irregularities and deterioration of an organic compound layer formed on an electrode are prevented in an active matrix light emitting device. After forming an insulating film so as to cover edge portions of a conductor which become |
| 6894312 |
EL display device |
May 17, 2005 |
| Plurality of pixels (102) are arranged on the substrate. Each of the pixels (102) is provided with an EL element which utilizes as a cathode a pixel electrode (105) connected to a current control TFT (104). On a counter substrate (110), a light shielding film (112) is disposed at the pos |
| 6867431 |
Semiconductor device and method for manufacturing the same |
March 15, 2005 |
| A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provid |
| 6847163 |
Self light-emitting device using an inert gas |
January 25, 2005 |
| To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer (102) is sandwiched between a transparent electrode (103) and a catrode (101), a |
| 6833560 |
Self-light-emitting device and method of manufacturing the same |
December 21, 2004 |
| Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure |
| 6809343 |
Electro luminescence display device |
October 26, 2004 |
| There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is |
| 6773971 |
Method of manufacturing a semiconductor device having lightly-doped drain (LDD) regions |
August 10, 2004 |
| There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurit |
| 6770562 |
Film formation apparatus and film formation method |
August 3, 2004 |
| There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impur |
| 6703643 |
Active matrix display device with an integrated circuit covered with a sealing material |
March 9, 2004 |
| An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus |
| 6693696 |
Electro-optical device |
February 17, 2004 |
| A liquid-crystal electro-optical device is offered which can operate at high speeds and easily oriented. The value of the surface tension of liquid crystal-orienting layers is 40 dynes/cm or more, and these layers are rubbed in antiparallel directions to each other. This reduces the |
| 6689492 |
Electro-optical device and electronic device |
February 10, 2004 |
| An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film 45 is disposed under an EL element 203 which comprises a pixel electrode (anode) 46, and EL layer 47 and a cathode 48, to make a str |
| 6670637 |
Electronic device |
December 30, 2003 |
| To provide an electronic device capable of bright image display. A pixel is structured such that a switching TFT and a current controlling TFT are formed on a substrate and an EL element is electrically connected to the current controlling TFT. A gate capacitor formed between a gate elec |
| 6641933 |
Light-emitting EL display device |
November 4, 2003 |
| By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the ra |
| 6628263 |
Information input/output apparatus |
September 30, 2003 |
| An information input/output apparatus comprising a display device, a screen on which an image displayed on the display device is projected with magnification, and a position detecting means for detecting a position of an arbitrarily designated particular point on the screen. |
| 6624477 |
Semiconductor device and method for manufacturing the same |
September 23, 2003 |
| A monolithic circuit comprises a plurality of thin film transistors. Source and drain regions of the TFT are provided with a metal silicide layer having a relatively low resistivity. Thereby, the effective distance between a gate and a source/drain electrode can be reduced. |
| 6593235 |
Semiconductor device with a tapered hole formed using multiple layers with different etching rat |
July 15, 2003 |
| A semiconductor device having an improved contact hole through an interlayer insulator. A first insulating film comprising silicon nitride is deposited. A second insulating film comprising silicon oxide is deposited on the first insulating film. The deposition condition of the second |
| 6580094 |
Electro luminescence display device |
June 17, 2003 |
| There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET (201) and an electric current controlling FET (202) are formed on a single crystal semiconductor substrate (11), and an EL element (203) is |
| 6525795 |
Liquid crystal display device |
February 25, 2003 |
| A liquid crystal display device is characterized by comprising first and second substrates on a surface of which electrodes are formed, a liquid crystal material with ferroelectricity or antiferroelectricity interposed between the first and second electrodes, and an orientation film and |
| 6507069 |
Semiconductor device and method of manufacture thereof |
January 14, 2003 |
| There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurit |
| 6445005 |
EL display device |
September 3, 2002 |
| Plurality of pixels (102) are arranged on the substrate. Each of the pixels (102) is provided with an EL element which utilizes as a cathode a pixel electrode (105) connected to a current control TFT (104). On a counter substrate (110), a light shielding film (112) is disposed at the pos |
| 6440877 |
Method of manufacturing an electro-optical device |
August 27, 2002 |
| An object of the invention is reducing a manufacturing cost of an EL display device and an electronic device equipped therewith. In an active matrix type EL display device, an EL material for a pixel portion is formed by coating steps using a dispenser device. As a discharge port of |
| 6420200 |
Method of manufacturing an electro-optical device |
July 16, 2002 |
| An object of the invention is to reduce the manufacturing cost of EL display devices and electronic devices incorporating the EL display devices.An EL material is formed by printing in an active matrix EL display device. Relief printing or screen printing may be used as the method of pri |
| 6417057 |
Method of forming a semiconductor device having a TFT utilizing optical annealing before a gate |
July 9, 2002 |
| There is provided an aluminum gate type thin film transistor integrated circuit having a matrix region and a region in which driving circuits thereof are formed wherein impurity regions are selectively formed on a semiconductor thin film in the form of islands and a gate insulation film |
| 6396078 |
Semiconductor device with a tapered hole formed using multiple layers with different etching rat |
May 28, 2002 |
| A semiconductor device having an improved contact hole through an interlayer insulator. A first insulating film comprising silicon nitride is deposited. A second insulating film comprising silicon oxide is deposited on the first insulating film. The deposition condition of the second |
| 6384427 |
Electronic device |
May 7, 2002 |
| To provide an electronic device capable of bright image display. A pixel is structured such that a switching TFT and a current controlling TFT are formed on a substrate and an EL element is electrically connected to the current controlling TFT. A gate capacitor formed between a gate elec |
| 6355942 |
Active matrix display and forming method thereof |
March 12, 2002 |
| An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus |
| 6304307 |
Liquid crystal display and method of manufacturing the same |
October 16, 2001 |
| There is provided an active matrix liquid crystal display having high reliability with improved yield of production.In an active matrix liquid crystal display in which peripheral driving circuits are in contact with a liquid crystal material, spacers are dispersed in peripheral driving c |
| 6259117 |
Active matrix display having storage capacitor associated with each pixel transistor |
July 10, 2001 |
| A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conducti |
| 6236444 |
Liquid crystal device with drive circuits on both substrates |
May 22, 2001 |
| A highly reliable liquid crystal display device in which the drive circuit region is protected, which comprises a first substrate having thereon a display region and a drive circuit region comprising a drive circuit for controlling the display in said display region and a second substrat |
| 6195139 |
Electro-optical device |
February 27, 2001 |
| A liquid crystal electro-optical device comprising a pair of substrates at least one of them is light-transmitting, electrodes being provided on said substrates, and an electro-optical modulating layer being supported by said pair of substrates, provided that said electro-optical modulat |
| 6181403 |
Electro-optical device |
January 30, 2001 |
| A liquid-crystal electro-optical device is offered which can operate at high speeds and easily oriented. The value of the surface tension of liquid crystal-orienting layers is 40 dynes/cm or more, and these layers are rubbed in antiparallel directions to each other. This reduces the |
| 6160269 |
Thin film semiconductor integrated circuit |
December 12, 2000 |
| A semiconductor device having a pixel provided in an active matrix. Each pixel includes a switching transistor and a pixel capacitor, the switching transistor having a semiconductor region of one conductivity type. An auxiliary capacitor is provided wherein the semiconductor region is on |
