| Patent Number |
Title Of Patent |
Date Issued |
| 6483673 |
Differential detection magnetoresistance head with laminated structure |
November 19, 2002 |
| A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one e |
| 6395388 |
Magnetoresistance effect element |
May 28, 2002 |
| The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an e |
| 6368706 |
Magnetoresistance effect element |
April 9, 2002 |
| The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an e |
| 6172858 |
Thin film head |
January 9, 2001 |
| The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magn |
| 6159593 |
Magnetoresistance effect element |
December 12, 2000 |
| The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an e |
| 6046891 |
Thin film head |
April 4, 2000 |
| The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magn |
| 5905611 |
Thin film magnetic head responsive to spin-dependent scattering |
May 18, 1999 |
| The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magn |
| 5828525 |
Differential detection magnetoresistance head |
October 27, 1998 |
| A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one e |
| 5780176 |
Magnetoresistance effect element |
July 14, 1998 |
| The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an e |
| 5738946 |
Magnetoresistance effect element |
April 14, 1998 |
| It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven |
| 5725963 |
Magnetoresistance effect element |
March 10, 1998 |
| It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven |
| 5702832 |
Magnetoresistance effect element |
December 30, 1997 |
| It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven |
| 5698335 |
Magnetoresistance effect element having bias films |
December 16, 1997 |
| It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven |
| 5688605 |
Magnetoresistance effect element |
November 18, 1997 |
| It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven |
| 5587026 |
Ferromagnetic film |
December 24, 1996 |
| Disclosed is a ferromagnetic film consisting of an alloy represented by a formula Co.sub.x Fe.sub.y T.sub.z, where T is an element selected from the group consisting of Ta, Ti, Zr, Hf, Mo, and W, and x, y, and z represent atomic % and satisfy 73<x<94, 5<y<15, 1<z<12, an |
| 5549978 |
Magnetoresistance effect element |
August 27, 1996 |
| It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven |
| 5484491 |
Ferromagnetic film |
January 16, 1996 |
| Disclosed is a ferromagnetic film consisting of an alloy represented by a formula (M.sub.a T.sub.b).sub.x N.sub.y, wherein M consists of Co and Fe, T is an element selected from the group of transition metals consisting of Ta and Nb, N is nitrogen, a, b, x, and y represent at % and satis |
| 5329413 |
Magnetoresistance sensor magnetically coupled with high-coercive force film at two end regions |
July 12, 1994 |
| A magnetoresistance sensor of this invention is designed to detect a magnetic field on the basis of a change in electric resistance of a magnetoresistance layer, and includes a substrate, the magnetoresistance layer, a magnetization stabilizing layer for stabilizing magnetization of |
| 5304975 |
Magnetoresistance effect element and magnetoresistance effect sensor |
April 19, 1994 |
| A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer. |
