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Inventor:
Kondoh; Reiko
Address:
Yokohama, JP
No. of patents:
19
Patents:












Patent Number Title Of Patent Date Issued
6483673 Differential detection magnetoresistance head with laminated structure November 19, 2002
A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one e
6395388 Magnetoresistance effect element May 28, 2002
The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an e
6368706 Magnetoresistance effect element April 9, 2002
The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an e
6172858 Thin film head January 9, 2001
The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magn
6159593 Magnetoresistance effect element December 12, 2000
The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an e
6046891 Thin film head April 4, 2000
The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magn
5905611 Thin film magnetic head responsive to spin-dependent scattering May 18, 1999
The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magn
5828525 Differential detection magnetoresistance head October 27, 1998
A GMR element part is formed of a laminated structure which comprises at least one pair of ferromagnetic layers and a nonmagnetic intermediate layer interposed between the pair of ferromagnetic layers. Signal magnetic field detecting ferromagnetic layers will be optionally disposed one e
5780176 Magnetoresistance effect element July 14, 1998
The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an e
5738946 Magnetoresistance effect element April 14, 1998
It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven
5725963 Magnetoresistance effect element March 10, 1998
It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven
5702832 Magnetoresistance effect element December 30, 1997
It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven
5698335 Magnetoresistance effect element having bias films December 16, 1997
It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven
5688605 Magnetoresistance effect element November 18, 1997
It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven
5587026 Ferromagnetic film December 24, 1996
Disclosed is a ferromagnetic film consisting of an alloy represented by a formula Co.sub.x Fe.sub.y T.sub.z, where T is an element selected from the group consisting of Ta, Ti, Zr, Hf, Mo, and W, and x, y, and z represent atomic % and satisfy 73<x<94, 5<y<15, 1<z<12, an
5549978 Magnetoresistance effect element August 27, 1996
It is an object of the present invention to provide a magnetoresistance effect element which has a film with a spin valve structure or an artificial lattice film having good soft magnetic characteristics, and which can be applied to a high-sensitivity magnetic head. The present inven
5484491 Ferromagnetic film January 16, 1996
Disclosed is a ferromagnetic film consisting of an alloy represented by a formula (M.sub.a T.sub.b).sub.x N.sub.y, wherein M consists of Co and Fe, T is an element selected from the group of transition metals consisting of Ta and Nb, N is nitrogen, a, b, x, and y represent at % and satis
5329413 Magnetoresistance sensor magnetically coupled with high-coercive force film at two end regions July 12, 1994
A magnetoresistance sensor of this invention is designed to detect a magnetic field on the basis of a change in electric resistance of a magnetoresistance layer, and includes a substrate, the magnetoresistance layer, a magnetization stabilizing layer for stabilizing magnetization of
5304975 Magnetoresistance effect element and magnetoresistance effect sensor April 19, 1994
A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.










 
 
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