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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kohno; Masayuki
Address:
Amagasaki, JP
No. of patents:
7
Patents:












Patent Number Title Of Patent Date Issued
8569186 Plasma CVD method, method for forming silicon nitride film and method for manufacturing semicond October 29, 2013
A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chambe
8258571 MOS semiconductor memory device having charge storage region formed from stack of insulating fil September 4, 2012
The invention provides a MOS semiconductor memory device that achieves excellent data retention characteristics while also achieving high-speed data write performance, low-power operation performance, and high reliability. A MOS semiconductor memory device 601 includes a first insula
8138103 Plasma CVD method, method for forming silicon nitride film and method for manufacturing semicond March 20, 2012
A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chambe
8119545 Forming a silicon nitride film by plasma CVD February 21, 2012
Provided is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given
8114790 Plasma CVD method, silicon nitride film formation method, semiconductor device manufacturing met February 14, 2012
A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave generation source configured to generate microwaves; a planar antenna including a plurality o
7771796 Plasma processing method and film forming method August 10, 2010
A plasma processing method of carrying out curing processing on a low dielectric constant film produced on a to-be-processed substrate by applying plasma thereto in a processing chamber of a plasma processing apparatus, includes the steps of: a) introducing, in the plasma processing
7763551 RLSA CVD deposition control using halogen gas for hydrogen scavenging July 27, 2010
Film thickness uniformity and stoichiometry are controlled and deposition rate is increased in the chemical vapor deposition (CVD) of silicon nitride from complex gas mixtures in microwave plasmas. In Si.sub.2H.sub.6+NH.sub.3+Ar gas mixtures using a radial line slot antenna (RLSA) mi










 
 
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