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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kobayashi; Hikaru
Address:
Kyoto, JP
No. of patents:
9
Patents:












Patent Number Title Of Patent Date Issued
8039403 Thin film transistor, method of manufacturing same, display device, method of modifying an oxide October 18, 2011
In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing an active oxidizing species; and a ga
7595230 Thin film transistor, method of manufacturing same, display device, method of modifying an oxide September 29, 2009
In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution containing a; active oxidizing species; and a ga
7157383 Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on s January 2, 2007
After cleaning a surface of a silicon substrate (1), impurities and natural oxide film existing on the silicon substrate (1) are removed by soaking the silicon substrate (1) in a 0.5%-by-volume HF aqueous solution for 5 minutes. The silicon substrate (1) is rinsed (cleaned) with ultr
6593164 Silicon photoelectric conversion device, method of manufacturing the same and method of processi July 15, 2003
A cyano process of introducing cyano ions (CN.sup.-) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing
6433269 Silicon photoelectric conversion device, method of fabricating the same and method of processing August 13, 2002
A cyano process of introducing cyano ions (CN.sup.-) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing
6265327 Method for forming an insulating film on semiconductor substrate surface and apparatus for carry July 24, 2001
Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surfac
6221788 Semiconductor and a method for manufacturing an oxide film on the surface of a semiconductor sub April 24, 2001
The semiconductor of the present invention comprises at least an oxide film and a metal thin film on the surface of the semiconductor. The metal thin film includes a metal serving as an oxidation catalyst and has a thickness in the range of 0.5-30 nm. The oxide film comprises a metal ser
6022813 Method and apparatus for manufacturing semiconductor devices February 8, 2000
There are disclosed a method and apparatus for manufacturing semiconductor devices. The surface of each semiconductor substrate is exposed to cyanide ions (CN.sup.-) in order to reduce the density of interface states at the insulating film/semiconductor interface. For this purpose, the
5100519 Method of trapping ion in silicon oxide film or silicon oxy-nitride film March 31, 1992
In a method of trapping ions in a silicon oxide film or a silicon oxy-nitride film, silicon or silicon nitride as an electrode is first immersed in a nonaqueous solvent containing an electrolyte. Then, a voltage is applied between the electrode and a counter electrode so as to oxidiz










 
 
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