Inventor:Knotter; Dirk M.
No. of patents:2
||Title Of Patent
||May 13, 2003|
|A method of reducing the thickness t of a layer of material on a substrate when the substrate is exposed to an etchant for a span of time sufficient to reduce t to a value t.sub.o, at which point exposure to the etchant is interrupted, includes the thickness to being determined using mon|
||Method of manufacturing a thin silicon-oxide layer
||April 22, 1997|
|A method of providing an ultra-thin (<1 nm) silicon-oxide layer on a substrate surface, for example, of a metal. A film of a solution of a polyorganosiloxane is applied to the substrate surface. After drying, the polyorganosiloxane is completely converted to said silicon-oxide layer b|