A method is provided for accelerating and improving the recovery of GaAs solar cells from the damage which they experience in space under high energy particle irradiation such as electrons, protons and neutrons. The method comprises combining thermal annealing with injection annealing.
A method is provided for accelerating and improving the recovery of GaAs solar cells from the damage which they experience in space under high energy particle irradiation scuh as electrons, protons and neutrons. The method comprises combining thermal annealing with injection annealing.
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium ars
The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium ars