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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kitajima; Yuichiro
Address:
Chiba, JP
No. of patents:
13
Patents:












Patent Number Title Of Patent Date Issued
8232146 Semiconductor device with resistor and fuse and method of manufacturing the same July 31, 2012
A fuse element is laminated on a resistor and the resistor is formed in a concave shape below a region in which cutting of the fuse element is carried out with a laser. Accordingly, there can be provided a semiconductor device which occupies a small area, causes no damage on the resi
8227856 Semiconductor device July 24, 2012
Provided is an ESD protection element, in which: LOCOS oxide films are formed at both ends of a gate electrode, and a conductivity type of a diffusion layer formed below one of the LOCOS oxide films which is not located on a drain side is set to a p-type, to thereby limit an amount of
8207575 Semiconductor device and method of manufacturing the same June 26, 2012
In a well region, an irregular structure is formed in a gate width direction, and a gate electrode is formed in concave portions and on top surfaces of convex portions via an insulating film. Upper and lower source regions are formed on one side of the gate electrode in a gate length
7964469 Method of manufacturing semiconductor device having resistor formed of a polycrystalline silicon June 21, 2011
In a method of manufacturing a semiconductor device, a first oxide film is formed in a convex shape on a field insulating film, a polycrystalline silicon film is formed on the first oxide film, and impurities are introduced into the polycrystalline silicon film. The polycrystalline s
7964457 Semiconductor integrated circuit device and a manufacturing method for the same June 21, 2011
Provided is a manufacturing method for a power management semiconductor device or an analog semiconductor device both including a CMOS. According to the method, a substance having high thermal conductivity is additionally provided above a semiconductor region constituting a low impur
7888212 Semiconductor device and method of manufacturing the same February 15, 2011
In a well region, an irregular structure is formed in a gate width direction, and a gate electrode is formed in concave portions and on top surfaces of convex portions via an insulating film. Upper and lower source regions are formed on one side of the gate electrode in a gate length
7847370 Semiconductor device with resistor and fuse and method of manufacturing the same December 7, 2010
A fuse element is laminated on a resistor and the resistor is formed in a concave shape below a region in which cutting of the fuse element is carried out with a laser. Accordingly, there can be provided a semiconductor device which occupies a small area, causes no damage on the resi
7575967 Semiconductor integrated circuit device and a manufacturing method for the same August 18, 2009
In a manufacturing method for a semiconductor device, a first impurity diffusion layer for a low impurity concentration drain of a second conductivity type is formed within a semiconductor layer of a first conductivity type, and a second impurity diffusion layer for a high impurity c
7351595 Method for manufacturing semiconductor device April 1, 2008
In a manufacturing method for a semiconductor device, a main body wafer having an interlayer insulating film is formed, and a monitor wafer on which a monitor element is formed is provided. Characteristics of the main body wafer are copied onto the monitor element by simultaneously p
7335518 Method for manufacturing semiconductor device February 26, 2008
In a manufacturing method for a semiconductor device, a main body wafer is formed, and a monitor wafer on which a monitor element is formed is provided. Characteristics of the main body wafer are copied onto the monitor element by simultaneously processing the main body wafer and the
7192790 Manufacturing method for a semiconductor device March 20, 2007
A manufacturing method for a semiconductor device which is capable of manufacturing the semiconductor device with a high quality in high yields while reducing variations in electric characteristic is disclosed. The manufacturing method according to the present invention includes a main
7129099 Method for manufacturing semiconductor device October 31, 2006
A manufacturing method for a semiconductor device which is capable of manufacturing the semiconductor device with a high quality in high yields while reducing variations in electric characteristic is disclosed. The manufacturing method according to the present invention includes a main
7043328 Method for manufacturing semiconductor device utilizing monitor wafers May 9, 2006
A manufacturing method for a semiconductor device which is capable of manufacturing the semiconductor device with a high quality in high yields while reducing variations in electric characteristic is disclosed. The manufacturing method according to the present invention includes a main










 
 
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