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Kim; Jong Kwan
Choongchungbook-Do, KR
No. of patents:

Patent Number Title Of Patent Date Issued
5661067 Method for forming twin well August 26, 1997
An improved twin well formation method for a semiconductor device capable of improving the latch-up characteristic in DRAM device which requires a high integration density and of improving a recess problem which occurs due to the capacitor, which includes the steps of a first step which

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