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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kim; Andrew-Tae
Address:
Yongin-si, KR
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
8198702 Electrical fuse device June 12, 2012
The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current de
8198701 Semiconductor device having thermally formed air gap in wiring layer and method of fabricating s June 12, 2012
A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width a
8013420 Electrical fuse device September 6, 2011
The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current de
7892966 Semiconductor device having thermally formed air gap in wiring layer and method of fabricating s February 22, 2011
A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width a
7638423 Semiconductor device and method of forming wires of semiconductor device December 29, 2009
A method of forming wires of a semiconductor device including forming a first metal wire on a semiconductor substrate; forming a first insulating film on the first metal wire; etching a portion of the first insulating film to expose a surface portion of the first metal wire; forming a fi
7446033 Method of forming a metal interconnection of a semiconductor device, and metal interconnection f November 4, 2008
A metal interconnection of a semiconductor device, formed using a damascene process, has large grains and yet a smooth surface. First, a barrier layer and a metal layer are sequentially formed in an opening in an interlayer dielectric layer. A CMP process is carried out on the metal










 
 
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