Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kim; Andrew-Tae
Address:
Yongin-si, KR
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
8198702 Electrical fuse device June 12, 2012
The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current de
8198701 Semiconductor device having thermally formed air gap in wiring layer and method of fabricating s June 12, 2012
A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width a
8013420 Electrical fuse device September 6, 2011
The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current de
7892966 Semiconductor device having thermally formed air gap in wiring layer and method of fabricating s February 22, 2011
A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width a
7638423 Semiconductor device and method of forming wires of semiconductor device December 29, 2009
A method of forming wires of a semiconductor device including forming a first metal wire on a semiconductor substrate; forming a first insulating film on the first metal wire; etching a portion of the first insulating film to expose a surface portion of the first metal wire; forming a fi
7446033 Method of forming a metal interconnection of a semiconductor device, and metal interconnection f November 4, 2008
A metal interconnection of a semiconductor device, formed using a damascene process, has large grains and yet a smooth surface. First, a barrier layer and a metal layer are sequentially formed in an opening in an interlayer dielectric layer. A CMP process is carried out on the metal










 
 
  Recently Added Patents
White polyester film and surface light source therewith
Continuous geospatial tracking system and method
Method and apparatus for cutting high quality internal features and contours
Antenna arrangement and antenna housing
Hand sign
Dimmable LED light fixture having adjustable color temperature
Change management automation tool
  Randomly Featured Patents
Method and system for generating displays in relation to the play of baccarat
Zero voltage switching cells for power converters
Four bar manifold
Customized messaging between wireless access point and services
Mobile communication system and method for establishing a data call
Optical fiber splitter module and fiber optic array therefor
Optoelectric module
Camcorder actuated treatment device for treating a camcorder head
Homogeneous detection of a target through nucleic acid ligand-ligand beacon interaction
Computer redundancy interface