Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kim; Andrew-Tae
Address:
Yongin-si, KR
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
8198702 Electrical fuse device June 12, 2012
The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current de
8198701 Semiconductor device having thermally formed air gap in wiring layer and method of fabricating s June 12, 2012
A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width a
8013420 Electrical fuse device September 6, 2011
The invention relates generally to a fuse device of a semiconductor device, and more particularly, to an electrical fuse device of a semiconductor device. Embodiments of the invention provide a fuse device that is capable of reducing programming error caused by non-uniform current de
7892966 Semiconductor device having thermally formed air gap in wiring layer and method of fabricating s February 22, 2011
A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width a
7638423 Semiconductor device and method of forming wires of semiconductor device December 29, 2009
A method of forming wires of a semiconductor device including forming a first metal wire on a semiconductor substrate; forming a first insulating film on the first metal wire; etching a portion of the first insulating film to expose a surface portion of the first metal wire; forming a fi
7446033 Method of forming a metal interconnection of a semiconductor device, and metal interconnection f November 4, 2008
A metal interconnection of a semiconductor device, formed using a damascene process, has large grains and yet a smooth surface. First, a barrier layer and a metal layer are sequentially formed in an opening in an interlayer dielectric layer. A CMP process is carried out on the metal










 
 
  Recently Added Patents
Method and system for securing user identities and creating virtual users to enhance privacy on a communication network
Enhanced customer interaction channel systems and methods
Evaluating advertising strategies by simulating their application
Funtionalizing cellulosic and lignocellulosic materials
Lamp
Rolling mill stand and related rolling mill for longitudinally rolling rod-shaped bodies
Method for curing addition curable organopolysiloxane composition
  Randomly Featured Patents
Vanadium/phosphorus mixed oxide catalyst precursor
Semiconductor image pickup device having function circuit block
Furnace adapted for burning city-, industrial and the like wastes
Method for preparation of catalyst carriers
Aqueous solution for cooling cold-rolled steel strip in a continuous annealing process
Method and apparatus for managing packets in a packet switched network
Anti-theft device for motor vehicles
Method and apparatus for efficiently controlling access to stored operation control data and tone forming data
Electrical and fluid control switches
Nestable multipiece truck cab roof fairing assembly