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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kikuchi; Hiroaki
Address:
Tokyo, JP
No. of patents:
24
Patents:












Patent Number Title Of Patent Date Issued
8236639 Semiconductor device manufacturing method August 7, 2012
A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the g
6715345 Coaxial probe with cantilever and scanning micro-wave microscope including the same April 6, 2004
A coaxial probe includes a coaxial cable including an electrical conductor extending therethrough and projecting therefrom at an end thereof, a planar waveguide on which the electrical conductor projecting from the coaxial cable is mounted, and a sensor electrically connected to the
6563321 Method and apparatus for detecting line-shorts by potential and temperature distribution May 13, 2003
In a method for detecting a line-short between conductive layers, a potential (or temperature) distribution of the conductive layers is detected while applying a DC voltage thereto. The method is particularly applicable to interdigitated conductive layers. A potential distribution ac
6496788 Data processing method and apparatus to determine killer ratio based on a variety of defect type December 17, 2002
When a killer ratio resulting from a specified defect is calculated from die research data including the number of defects and manufacturing result pass/fail for each of a plurality of dies, the die research data is classified based on the number of the specified defects present on a die
6495856 Semiconductor device having a test pattern same as conductive pattern to be tested and method fo December 17, 2002
A semiconductor random access memory device has stacked capacitor electrodes and test conductive pieces laid on the same pattern as the stacked capacitor electrodes, and the test conductive pieces are alternately isolated from and connected to a ground line, wherein the test conducti
6346435 Laminated substrate fabricated from semiconductor wafers bonded to each other without contact be February 12, 2002
An insulating layer is selectively grown on the major surface of a first silicon wafer, and is partially etched away so as to be retracted below the major surface; after the retraction of the insulating layer, the first silicon wafer is bonded to a second silicon wafer, and the major sur
6274255 Component for interior decoration of aircraft, and method of manufacturing the same August 14, 2001
A surface material is provided with a first adhesive layer formed by applying a first adhesive composed of a soluble self-digesting adhesive to an adhesive surface and a second adhesive layer formed by applying a second adhesive composed of a two-part synthetic resin contact adhesive to
6204075 Method of detecting defects in a wiring process March 20, 2001
A circuit, a semiconductor wafer including the circuit and a method for detecting defects of wiring used for detecting a malfunction in a wiring fabrication process during semiconductor device manufacturing. The circuit comprises an insulating film formed on a semiconductor substrate, a
6096433 Laminated substrate fabricated from semiconductor wafers bonded to each other without contact be August 1, 2000
An insulating layer is selectively grown on the major surface of a first silicon wafer, and is partially etched away so as to be retracted below the major surface; after the retraction of the insulating layer, the first silicon wafer is bonded to a second silicon wafer, and the major sur
5999006 Method of and apparatus for conducting analysis of buried oxides December 7, 1999
A beam of light is projected through an electrolyte to a SOI substrate to scan the surface of the SOI substrate. When the light passes through a pinhole in a buried oxide layer, the light excites a semiconductor layer beneath the buried oxides. An ammeter measures electric charges derive
5985681 Method of producing bonded substrate with silicon-on-insulator structure November 16, 1999
Two wafers of single-crystal silicon are used to produce a bonded substrate having a silicon-on-insulator (SOI) structure. In a principal surface of a first wafer, a number of first insulator film patterns of equal thickness art formed for isolation of semiconductor devices to be fabrica
5894037 Silicon semiconductor substrate and method of fabricating the same April 13, 1999
A silicon semiconductor substrate including a silicon semiconductor layer at one of upper and lower surfaces thereof, the silicon semiconductor layer being composed of polysilicon or noncrystal silicon and containing oxygen in the range of 2 atomic % to 20 atomic % both inclusive, nitrog
5847438 Bonded IC substrate with a high breakdown voltage and large current capabilities December 8, 1998
A semiconductor device includes a groove formed in a surface of a first semiconductor substrate of one conductivity type in order to partition and isolate first and second device regions. A first insulating film on the first semiconductor substrate of the first device region also contact
5844294 Semiconductor substrate with SOI structure December 1, 1998
A semiconductor substrate which is optimum for a substrate for integrating a vertical power element and a control circuit element monolithically. A cavity 3 is formed between a dielectric layer 2 and a single crystal silicon substrate 4 in a control circuit element forming region 8, and
5753353 Soi Substrate May 19, 1998
An SOI substrate comprises a silicon supporting substrate, an insulating film formed on the top of the silicon supporting substrate and a silicon active layer formed on the insulating film. The silicon supporting substrate is doped with an impurity at a concentration not less than 1.
5435372 Smooth opening/closing multiple panel folding spring, or the like, biased folding doors July 25, 1995
The folding doors 100 includes of a first door panel 150 and a second door panel 110, the first door panel 150 being attached to the door opening portion of the wall rotatively by a pin 150. The second door panel 110 is attached to the first door panel 150 by a hinge 4. A guiding device
5374582 Laminated substrate for semiconductor device and manufacturing method thereof December 20, 1994
A method for fabricating a laminated substrate for a semiconductor device having a high voltage power device and a low voltage element formed in a region isolated from the power device with a P-N junction. The region for the low voltage element is formed on a buried layer of P type forme
5367568 Switchboard terminal apparatus having a plurality of loop circuits November 22, 1994
In a switchboard terminal apparatus, a plurality of loop circuits are simultaneously handled by a switchboard operator. The number of loop circuits in the apparatus exceeds the capacities of screen displays and keys/lamps. A normal loop circuit controller controls loop circuits up to
5298449 Semiconductor substrate having a silicon-on-insulator structure and method of fabricating the sa March 29, 1994
The invention provides a silicon-on-insulator semiconductor substrate structure and a method of fabricating the same. The structure includes a base silicon substrate, a mono-crystalline silicon film formed on the base silicon substrate in a predetermined region, a poly-crystalline silico
5285101 Semiconductor device February 8, 1994
A semiconductor device has an active region composed of an impurity diffused region formed in a substrate. The impurity diffused region is divided into a plurality of impurity diffused sub-regions formed separately from each other in the substrate but electrically coupled to each oth
4837632 Video encoding apparatus including movement compensation June 6, 1989
In a video encoding apparatus of the invention, a video camera is provided with a moving direction detecting means for detecting movement of the camera in preset moving direction and outputting a detecting signal, a movement information generator is installed for operating the displaceme
4811265 Basic cell type full search vector quantization coder March 7, 1989
A basic cell type full search vector quantization coder has a plurality of basic cells and a minimum distortion output vector detector. In each basic cell a common K-dimensional input vector is divided by b into b sub-blocks and n output vectors are read one by one out of a set of N outp
4809067 Method and apparatus for encoding transmitting and receiving image by pulse code modulation February 28, 1989
An image encoding/transmitting apparatus and method implemented by applying the vector quantization technology utilizing the differential pulse code modulation system in which an estimated error signal is compared with a threshold value to generate a change or movement detection signal a
4769826 Video encoding apparatus September 6, 1988
In a video encoding apparatus of the invention, a video camera is provided with a moving direction detecting means for detecting movement of the camera in preset moving direction and outputting a detecting signal, a movement information generator is installed for operating the displaceme










 
 
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