| Patent Number |
Title Of Patent |
Date Issued |
| 8148174 |
Magnetic tunnel junction (MTJ) formation with two-step process |
April 3, 2012 |
| A method of manufacturing a magnetic memory element includes the steps of performing a first etching an oxide layer is etched, using a first photo-resist, the oxide layer formed on top of a contact layer that is formed on top of a magneto tunnel junction (MTJ), depositing a second ph |
| 6587382 |
Nonvolatile memory using flexible erasing methods and method and system for using same |
July 1, 2003 |
| An embodiment of the present invention is disclosed to include a nonvolatile memory system for controlling erase operations performed on a nonvolatile memory array comprised of rows and columns, the nonvolatile memory array stores digital information organized into blocks with each b |
| 6411546 |
Nonvolatile memory using flexible erasing methods and method and system for using same |
June 25, 2002 |
| An embodiment of the present invention is disclosed to include a nonvolatile memory system for controlling erase operations performed on a nonvolatile memory array comprised of rows and columns, the nonvolatile memory array stores digital information organized into blocks with each b |
| 4608585 |
Electrically erasable PROM cell |
August 26, 1986 |
| In an EEPROM memory cell of the kind which relies on tunneling action through a thin oxide layer to store charge on a floating gate, the floating gate and the channel regions of the memory cell are provided with additional doping of the same kind as in the substrate in order to raise |
| 4527255 |
Non-volatile static random-access memory cell |
July 2, 1985 |
| A non-volatile memory cell (20) contains a pair of cross-coupled like-polarity FET's (Q1 and Q2) that serve as a volatile location (21) for storing a data bit and a like-polarity variable-threshold insulated-gate FET (Q3) that serves as a non-volatile storage location (22). The varia |
