| Patent Number |
Title Of Patent |
Date Issued |
| 6912107 |
Magnetic element with insulating veils and fabricating method thereof |
June 28, 2005 |
| An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers |
| 6835423 |
Method of fabricating a magnetic element with insulating veils |
December 28, 2004 |
| An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers |
| 6365419 |
High density MRAM cell array |
April 2, 2002 |
| A method of fabricating an MRAM cell includes providing an isolation transistor on a semiconductor substrate and forming an interconnect stack on the substrate in communication with one terminal of the transistor. A via is formed on the upper end of the stack so as to extend from a p |
| 6211090 |
Method of fabricating flux concentrating layer for use with magnetoresistive random access memor |
April 3, 2001 |
| A method of fabricating a flux concentrator for use in magnetic memory devices including the steps of providing at least one magnetic memory bit (10) and forming proximate thereto a material stack defining a copper (Cu) damascene bit line (56) including a flux concentrating layer (52). T |
