| Patent Number |
Title Of Patent |
Date Issued |
| RE38613 |
Method for growing a nitride compound semiconductor |
October 5, 2004 |
| A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, |
| 6903392 |
Semiconductor device and its manufacturing method |
June 7, 2005 |
| A semiconductor device having a single-crystal substrate made of a material different from nitride III-V compound semiconductors, and a device made on one major surface of said single-crystal substrate by using III-V compound semiconductors, including electrical connection to said device |
| 6750481 |
Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and |
June 15, 2004 |
| A semiconductor crystal layer composed of GaN is grown on a base substrate composed of sapphire sandwiching a separating layer composed of AlN and a buffer layer composed of GaN. The separating layers and the buffer layers are distributed in the form of lines, and a flow-through hole for |
| 6501154 |
Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structu |
December 31, 2002 |
| There are provided a semiconductor substrate and a semiconductor laser using the semiconductor substrate which promises smooth and optically excellent cleaved surfaces and is suitable for fabricating semiconductor lasers using nitride III-V compound semiconductors. Using a semiconductor |
| 6468902 |
Semiconductor device and its manufacturing method |
October 22, 2002 |
| After making a GaN FET by growing GaN semiconductor layers on the surface of a sapphire substrate, the bottom surface of the sapphire substrate is processed by lapping, using an abrasive liquid containing a diamond granular abrasive material and reducing the grain size of the abrasive |
| 6426264 |
Method of manufacturing a semiconductor laminated substrate, semiconductor crystal substrate and |
July 30, 2002 |
| A semiconductor crystal layer composed of GaN is grown on a base substrate composed of sapphire sandwiching a separating layer composed of AlN and a buffer layer composed of GaN. The separating layers and the buffer layers are distributed in the form of lines, and a flow-through hole for |
| 6413312 |
Method for growing a nitride compound semiconductor |
July 2, 2002 |
| A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, |
| 6362016 |
Semiconductor light emitting device |
March 26, 2002 |
| A luminous intensity of a semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors is improved by having a thickness d of a light emitting layer (active layer) of the semiconductor light emitting device having a multi-la |
| 6281032 |
Manufacturing method for nitride III-V compound semiconductor device using bonding |
August 28, 2001 |
| In a semiconductor device manufacturing method capable of manufacturing semiconductor lasers, light emitting diodes or electron transport devices using nitride III-V compound semiconductors with a high productivity, a GaN semiconductor laser wafer is prepared in which a plurality of |
| 6239033 |
Manufacturing method of semiconductor device |
May 29, 2001 |
| After making a GaN FET by growing GaN semiconductor layers on the surface of a sapphire substrate, the bottom surface of the sapphire substrate is processed by lapping, using an abrasive liquid containing a diamond granular abrasive material and reducing the grain size of the abrasive |
| 6235617 |
Semiconductor device and its manufacturing method |
May 22, 2001 |
| It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric conductivity by ion implantation. |
| 6140169 |
Method for manufacturing field effect transistor |
October 31, 2000 |
| A GaN-type field effect transistor exhibits a large input amplitude by using a gate insulating film. A channel layer and a gate insulating film are sequentially laminated on a substrate with a buffer layer therebetween. A gate electrode is formed on the gate insulating film. A source |
| 6121636 |
Semiconductor light emitting device |
September 19, 2000 |
| A semiconductor light emitting device is provided, which does not deteriorate in luminance, maintains a high reliability, permits more free choice of an adhesive, and promises effective extraction of light to the exterior even when it is bonded to a lead frame or other support with the |
| 6111273 |
Semiconductor device and its manufacturing method |
August 29, 2000 |
| It is intended to provide a semiconductor device and its manufacturing method in which a high-resistance region maintaining a high resistance even under high temperatures can be made in a nitride III-V compound semiconductor layer having an electric conductivity by ion implantation. |
| 6107162 |
Method for manufacture of cleaved light emitting semiconductor device |
August 22, 2000 |
| A semiconductor device such as a semiconductor layer is formed of a compound semiconductor layer of III-V group such as GaN. In the case where the substrate has not any planes that are easy to cleave which coincides with an easy-to-cleave plane of a semiconductor layer grown on the s |
| 6081001 |
Nitride semiconductor light emitting device |
June 27, 2000 |
| A luminous intensity of a semiconductor light emitting device having a multi-layer structure formed of nitride group III-V compound semiconductors is improved by having a thickness d of a light emitting layer (active layer) of the semiconductor light emitting device having a multi-la |
| 6064082 |
Heterojunction field effect transistor |
May 16, 2000 |
| A heterojunction field effect transistor realizing a high performance by a significant decrease. in source resistance while maintaining a sufficiently high gate resistivity to voltage is provided. Sequentially stacked on a c-face sapphire substrate via a buffer layer are an undoped G |
| 6043140 |
Method for growing a nitride compound semiconductor |
March 28, 2000 |
| A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, |
| 5981980 |
Semiconductor laminating structure |
November 9, 1999 |
| To provide a semiconductor laminating structure in which an epitaxial growth of a GaN system material is achieved on a substrate with an excellent matching property with the substrate. The semiconductor laminating structure includes the substrate having a perovskite structure and at |
| 5929467 |
Field effect transistor with nitride compound |
July 27, 1999 |
| A GaN-type field effect transistor exhibits a large input amplitude by using a gate insulating film. A channel layer and a gate insulating film are sequentially laminated on a substrate with a buffer layer therebetween. A gate electrode is formed on the gate insulating film. A source |
| 5863811 |
Method for growing single crystal III-V compound semiconductor layers on non single crystal III- |
January 26, 1999 |
| A method for growing a single crystal III-V compound semiconductor layer, in which grown by vapor deposition on a first single crystal III-V compound semiconductor layer including at least Ga and N is a second single crystal III-V compound semiconductor layer different from the first |
| 5821568 |
Cleaved semiconductor device with {11-20} plane |
October 13, 1998 |
| A semiconductor device such as a semiconductor layer is formed of a compound semiconductor layer of III-V group such as GaN. In the case where the substrate has not any planes that are easy to cleave which coincides with an easy-to-cleave plane of a semiconductor layer grown on the s |
| 5753966 |
Semiconductor device with cleaved surface |
May 19, 1998 |
| A semiconductor light emitting device is prepared by the steps of forming a semiconductor layer 2 having a laminated structure containing at least a first cladding layer 6, a light emitting layer 7, and a second cladding layer 8 on a substrate 1 having {11-20} plane (plane a) as the main |
| 5200021 |
Method and apparatus for vapor deposition |
April 6, 1993 |
| A method for vapor deposition includes monitoring of growth of a semiconductor layer by way of in-situ monitoring. According to the invention, in-situ monitoring is performed by irradiating a light beam onto the surface of the growing layer in a direction nearly perpendicular to the |
| 5140399 |
Heterojunction bipolar transistor and the manufacturing method thereof |
August 18, 1992 |
| A heterojunction bipolar transistor formed as a collector top or emitter top type. This heterojunction bipolar transistor can operate at high speed and can be fabricated into a semiconductor integrated circuit with ease. The manufacturing method thereof is also disclosed. |
| 4916499 |
Junction field effect transistor with vertical gate region |
April 10, 1990 |
| A junction field effect transistor having a source region, a gate region and a drain region, which are laminated to form a laminated layer, and a channel region formed on one side surface across the laminated layer, and also having a cavity which separates high impurity concentration reg |
| 4903104 |
Heterojunctional collector-top type bi-polar transistor |
February 20, 1990 |
| A heterojunction type bi-polar transistor which has a heterojunction in the boundary between an intrinsic base region and an external base region to thereby eliminate the periphery effect and accordingly obtain a high current amplification factor. |
| 4758870 |
Semiconductor device |
July 19, 1988 |
| A III-V semiconductor device is disclosed, which includes an emitter region, an emitter barrier region having such a barrier height as to substantially restrict a thermionic emission current as compared with a tunneling current and such a barrier width as to permit the tunneling curr |
| 4751195 |
Method of manufacturing a heterojunction bipolar transistor |
June 14, 1988 |
| A method of manufacturing a heterojunction bipolar transistor in which a collector region, a base region and an emitter region are successively formed on a compound semiconductor substrate, forming the emitter region by epitaxial growth in a concave portion formed on an electrode leading |
