| Patent Number |
Title Of Patent |
Date Issued |
| 7554147 |
Memory device and manufacturing method thereof |
June 30, 2009 |
| A memory device in which both DRAM and phase-change memory (PCRAM) are mounted is provided with a DRAM bit line, a PCRAM bit line or a PCRAM source line formed on an conductive layer shared with the DRAM bit line, and a sense amplifier connected between the DRAM bit line and the PCRAM |
| 7550756 |
Semiconductor memory |
June 23, 2009 |
| In a semiconductor memory comprising a matrix of memory cells each composed of one transistor and one chalcogenide layer as a memory element, no chalcogenide layer is disposed at a joint between an upper electrode wire connected to the chalcogenide layer and another wiring layer. |
| 7502252 |
Nonvolatile semiconductor memory device and phase change memory device |
March 10, 2009 |
| For the purpose of providing a phase change memory device advantageous in layout and operation control by obtaining sufficient write current for high integrated phase change memory devices, the nonvolatile semiconductor memory device of the invention in which word lines and bit lines |
| 7449711 |
Phase-change-type semiconductor memory device |
November 11, 2008 |
| A phase-change memory device includes a plurality of bit lines extending in a row direction, a plurality of selection lines extending in a column direction, and an array of memory cells each disposed at one of intersections between the bit lines and selection lines. Each memory cell |
| 7224016 |
Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduc |
May 29, 2007 |
| A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET |
| 7183170 |
Manufacturing method of semiconductor device |
February 27, 2007 |
| After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxida |
