| Patent Number |
Title Of Patent |
Date Issued |
| 6475563 |
Method for forming a thin film using a gas |
November 5, 2002 |
| A method for forming a thin film on a substrate using a gas includes providing a substrate in a reaction chamber. A head for emitting a gas in the reaction chamber is disposed opposite the substrate. This step includes mounting a detachable gas liberating surface to the head so that |
| 6156657 |
Method of treating active material |
December 5, 2000 |
| An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried o |
| 6004885 |
Thin film formation on semiconductor wafer |
December 21, 1999 |
| A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reduc |
| 5731240 |
Manufacturing method for semiconductor depositing device |
March 24, 1998 |
| A method of manufacturing a semiconductor device includes the steps of: depositing a semiconductor film onto a semiconductor substrate, the semiconductor film having a main component which is the same material as the semiconductor substrate; and forming a first insulating layer on the |
| 5653810 |
Apparatus for forming metal film and process for forming metal film |
August 5, 1997 |
| An apparatus for forming metal film for forming metal films on substrates comprises a reaction chamber, a plurality of first and second electrodes alternately arranged in the reaction chamber, an energy supply means that supplies to the first and second electrodes an electrical energy fo |
| 5580822 |
Chemical vapor deposition method |
December 3, 1996 |
| A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reduc |
| 5534069 |
Method of treating active material |
July 9, 1996 |
| An active substance treating method is characterized in that an active substance is caused to react with an inactivating substance in an exhaust system for a thin film forming apparatus. A thin film forming apparatus includes a common chamber having a region where plasma CVD is carried o |
| 5447568 |
Chemical vapor deposition method and apparatus making use of liquid starting material |
September 5, 1995 |
| A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reduc |
