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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kaszuba; Philip V.
Address:
Essex Junction, VT
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
7944550 System and method for detecting local mechanical stress in integreated devices May 17, 2011
A method of detecting local mechanical stress in integrated devices is provided, the method comprising: enabling the detection of a photovoltage difference between a scan probe device and a surface portion of an integrated device, the scan probe device being configured to deflect in
7812347 Integrated circuit and methods of measurement and preparation of measurement structure October 12, 2010
A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so a
7671604 Nanoscale fault isolation and measurement system March 2, 2010
Disclosed is a fault isolation and measurement system that provides multiple near-field scanning isolation techniques on a common platform. The system incorporates the use of a specialized holder to supply electrical bias to internal circuit structures located within an area of a dev
7511510 Nanoscale fault isolation and measurement system March 31, 2009
Disclosed is a fault isolation and measurement system that provides multiple near-field scanning isolation techniques on a common platform. The system incorporates the use of a specialized holder to supply electrical bias to internal circuit structures located within an area of a dev
7507591 Methods of measurement and preparation of measurement structure of integrated circuit March 24, 2009
A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so a
7205237 Apparatus and method for selected site backside unlayering of si, GaAs, Ga.sub.xAl.sub.yAs.sub.z April 17, 2007
Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves th
6198300 Silicided silicon microtips for scanning probe microscopy March 6, 2001
A micromechanical sensor probe for a scanned-probe tool includes a silicon cantilever and a silicon tip physically attached to the cantilever. The micromechanical sensor probe has a coating of a refractory metal silicide formed at least on the tip. Titanium silicide is preferred. The pro
6139759 Method of manufacturing silicided silicon microtips for scanning probe microscopy October 31, 2000
A micromechanical sensor probe for a scanned-probe tool comprising a silicon probe and a coating of a refractory metal silicide formed at least on the tip of the probe. Titanium silicide is preferred. A method for manufacturing such a probe includes the steps of, first, providing a s










 
 
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