| Patent Number |
Title Of Patent |
Date Issued |
| 7528541 |
Light-emitting element and light-emitting device |
May 5, 2009 |
| Organic materials doped with alkali metal have been conventionally used for electron transport layers or electron injection layers which constitute light-emitting films in organic EL light-emitting elements which are used in display devices or illuminating devices. Such conventional |
| 7495307 |
Columnar electric device |
February 24, 2009 |
| A sensor whose size can be decreased without marring the performance and which can be installed in a narrow place, an electric device, and a method for easily manufacturing the electric device. By vacuum deposition of semiconductor on a columnar body or by applying a melt, solution, or |
| 7491613 |
Line element and method of manufacturing the line element |
February 17, 2009 |
| An element capable of manufacturing various devices of any shape having plasticity or flexibility without being limited by shape and a method for manufacturing thereof are provided. An element characterized by that a circuit element is formed continuously or intermittently in the lon |
| 6509305 |
Method for preparing cleaning solution |
January 21, 2003 |
| Deionized water from a deionized water source (21) for electrolysis is supplied by a pressurizing pump (20) to an electrolyzer (2) to obtain a hydrogen gas and ozone gas by means of electrolysis. The pressures of these gasses are maintained at not less than the atmospheric pressure. |
| 6274040 |
Apparatus for removing electrostatic charge from high resistivity liquid |
August 14, 2001 |
| There are provided a method and an apparatus for removing electrostatic charges from high resistivity liquid. An insulating film is formed on the surface of a conductive element which is in contact with the high resistivity liquid wherein the insulating film has such a thickness that a |
| 6086057 |
Method and device for preparing cleaning solution |
July 11, 2000 |
| A cleaning solution preparation device includes a deionized water supply source, a gas supply source, a gas-dissolving unit, and a gas supply pressure controller. The gas supply source supplies any of an oxidative gas, a reductive gas, an inert gas, a mixed gas of an oxidative gas and an |
| 5783790 |
Wet treatment method |
July 21, 1998 |
| A surfactant is added to anodic or cathodic water obtained by electrolyzing deionized water or high-purity water. Then, an object of treatment is treated with the anodic or cathodic water containing the surfactant. The object of treatment may be treated, in this way, while irradiating it |
| 5755938 |
Single chamber for CVD and sputtering film manufacturing |
May 26, 1998 |
| An apparatus which allows a first film to be formed on a substrate by chemical vapor deposition (CVD) and a second film to be formed on the substrate by sputtering, wherein the processes are performed sequentially in the same deposition chamber without exposing the substrate to an ox |
| 5714407 |
Etching agent, electronic device and method of manufacturing the device |
February 3, 1998 |
| An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen ele |
| 5623161 |
Electronic element and method of producing same |
April 22, 1997 |
| An electronic element having a sufficient dielectric strength remarkably superior to any of the conventional ones. In this element, a conductive wire pattern is formed on the surface of a substrate which is insulative at least in its surface, and an insulating layer is so formed as to co |
| 5609737 |
Film manufacturing method using single reaction chamber for chemical-vapor deposition and sputte |
March 11, 1997 |
| A method for manufacturing thin films in which a first film is formed on a substrate using chemical-vapor deposition (CVD), and a second film is formed on the substrate using sputtering, wherein the processes are sequentially performed in the same deposition chamber without exposing the |
| 5573958 |
Method of fabricating a thin film transistor wherein the gate terminal is formed after the gate |
November 12, 1996 |
| A method of fabricating a thin film transistor of an inverted stagger structure having a gate terminal, a gate insulator a semiconductor film, a source electrode and a drain electrode formed in that order; a gate terminal and a gate wiring are provided for supplying a scanning signal to |
| 5570031 |
Substrate surface potential measuring apparatus and plasma equipment |
October 29, 1996 |
| There is provided a surface potential measuring apparatus cable of accurately measuring the potential of a substrate regardless of the material of the substrate, and a plasma equipment capable of accurately measuring and controlling ion energy. The substrate surface potential measuri |
| 5550091 |
Method of sputtering a silicon nitride film |
August 27, 1996 |
| There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposit |
| 5480563 |
Method for removing electrostatic charge from high resistivity liquid |
January 2, 1996 |
| There are provided a method and an apparatus for removing electrostatic charges from high resistivity liquid. An insulating film is formed on the surface of a conductive element which is in contact with the high resistivity liquid wherein the insulating film has such a thickness that a |
| 5415718 |
Reactive ion etching device |
May 16, 1995 |
| An object of this invention is to provide an RIE apparatus, for instance, with which conditions for an etching process such as an etching speed can be set easily, precisely, and with repeatability, by, for instance, introducing a novel concept that is the flow rate of charged particles |
| 5409569 |
Etchant, detergent and device/apparatus manufacturing method |
April 25, 1995 |
| An etchant which generates neither heat nor gas during the process, does not sublimate, is stable for a long period of time, requires no special pipings, and further requires no special treatment of waste water because of containing no organic solvents. The etchant is a solution containi |
