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Kang; Jong-Hyuk
Suwon-si, KR
No. of patents:

Patent Number Title Of Patent Date Issued
8294209 Semiconductor memory device and method of manufacturing the same October 23, 2012
A semiconductor memory device includes a plurality of active pillars protruding from a semiconductor substrate, a first gate electrode disposed on at least one sidewall of the active pillar, a first gate insulating layer being disposed between the active pillar and the first gate ele
8163616 Methods of manufacturing nonvolatile memory devices April 24, 2012
Nonvolatile memory devices and methods of manufacturing nonvolatile memory devices are provided. The method includes patterning a bulk substrate to form an active pillar; forming a charge storage layer on a side surface of active pillar; and forming a plurality of gates connected to
8063441 Vertical type semiconductor device November 22, 2011
A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresp
8063438 Vertical-type semiconductor devices November 22, 2011
In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewall
7973993 Flat panel display and manufacturing method thereof July 5, 2011
A flat panel display includes a first substrate, a thin film transistor formed on the first substrate, a second substrate facing the first substrate, and a light controller formed on the second substrate, wherein the light controller is electrically connected to the thin film transis
7960780 Vertical-type semiconductor device June 14, 2011
In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the
7956407 Vertical type semiconductor device, method of manufacturing a vertical type semiconductor device June 7, 2011
A vertical pillar semiconductor device includes a substrate, a single crystalline semiconductor pattern, a gate insulation layer structure and a gate electrode. The substrate may include a first impurity region. The single crystalline semiconductor pattern may be on the first impurity

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