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Kamiura; Yuuki
Hyogo, JP
No. of patents:

Patent Number Title Of Patent Date Issued
6759317 Method of manufacturing semiconductor device having passivation film and buffer coating film July 6, 2004
An interconnection is formed on a semiconductor substrate having a semiconductor element formed thereon. Next, a passivation film is formed on the semiconductor substrate including the interconnection. Further, a polyimide film, which is served as a buffer coating film, is formed on the
6645859 Semiconductor device and manufacturing method thereof November 11, 2003
A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor
6544904 Method of manufacturing semiconductor device April 8, 2003
A method of manufacturing a semiconductor device is provided, which prevents a polyimide film from coming unstuck from a film to be subjected to isotropic etching, and further prevents deposits adhered to respective side faces of the films from coming off, during a heat treatment for

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