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Inventor: Kamiura; Yuuki
Address: Hyogo, JP
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6759317 |
Method of manufacturing semiconductor device having passivation film and buffer coating film |
July 6, 2004 |
| An interconnection is formed on a semiconductor substrate having a semiconductor element formed thereon. Next, a passivation film is formed on the semiconductor substrate including the interconnection. Further, a polyimide film, which is served as a buffer coating film, is formed on the |
| 6645859 |
Semiconductor device and manufacturing method thereof |
November 11, 2003 |
| A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor |
| 6544904 |
Method of manufacturing semiconductor device |
April 8, 2003 |
| A method of manufacturing a semiconductor device is provided, which prevents a polyimide film from coming unstuck from a film to be subjected to isotropic etching, and further prevents deposits adhered to respective side faces of the films from coming off, during a heat treatment for |
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