Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kamimura; Fumiya
Address:
Osaka, JP
No. of patents:
2
Patents:












Patent Number Title Of Patent Date Issued
7899420 Wireless transmission device in which transmission output is controlled in feedback control March 1, 2011
A wireless transmission device includes a RF power amplification section for amplifying a transmit RF signal and outputting the amplified signal to a transmission antenna, a detector section, and a control section. The RF power amplification section includes a plurality of stages of
7683712 Wireless frequency power amplifier, semiconductor device, and wireless frequency power amplifica March 23, 2010
A differential amplifier circuit is connected to the input node and the output node of the final amplification stage through detection circuits. The signal level difference output from the differential amplifier circuit does not change even if the input power varies. Because a change










 
 
  Recently Added Patents
Signal routing dependent on a loading indicator of a mobile node
System and method for receiving MBMS broadcasting service
Fixing apparatus
Vehicle control apparatus
Integrated projector system
Use of beta-adrenoceptor antagonists for the manufacture of a medicament of the treatment of disorders of the outer retina
User interface for integrating applications on a mobile communication device
  Randomly Featured Patents
Beverage container opening device
High-frequency, high-efficiency converter with recirculating energy control for high-density power conversion
Document separation/detection technique
Input/output line sense amplifier and semiconductor memory device using the same
IC card connector grounding structure
Combination weighing device
System and method for enabling access to a data source through a graphical interface
Methods for fabricating semiconductor substrates with silicon regions having differential crystallographic orientations
Configurable safety light receptacle
Method of measuring doping characteristic of compound semiconductor in real time