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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kamijo; Atsushi
Address:
Tokyo, JP
No. of patents:
29
Patents:












Patent Number Title Of Patent Date Issued
7742263 Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance el June 22, 2010
A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the m
7695757 Method of manufacturing a substrate for organic electroluminescent device April 13, 2010
Disclosed is a method of manufacturing a substrate for an organic EL device, the method comprising the step of: filling grooves of the optical element with sol-gel coating solution or organic metal cracking solution when a diffraction grating 12 is formed on the glass substrate 11, w
7638797 Substrate of emitting device and emitting device using the same December 29, 2009
Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10
7619357 Electroluminescent display device November 17, 2009
The present invention relates to an organic electroluminescent device. There is provided an organic electroluminescent device with a good luminescence property and high luminous efficiency in which the organic electroluminescent device has a diffraction grating 2 on the surface of th
7394626 Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance el July 1, 2008
A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the m
7391048 Optical control portion with graded metal dopant to control refractive index June 24, 2008
Provided is a substrate for a light-emitting device having good light emitting efficiency and light-emitting device using the substrate. A light transparent substrate 10 is layered with a first layer 30 having a refractive index higher than that of the light transparent substrate 10
7379280 Magnetic tunnel magneto-resistance device and magnetic memory using the same May 27, 2008
A magneto-resistance device is composed of an anti-ferromagnetic layer (5), a pinned ferromagnetic layer (20), a tunnel insulating layer (9) and a free ferromagnetic layer (21). The pinned ferromagnetic layer (20) is connected to the anti-ferromagnetic layer (5) and has a fixed spontaneo
7372673 Magnetoresistive effect transducer having longitudinal bias layer and control layer directly con May 13, 2008
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to
7345419 Substrate for optical element, organic electroluminescence element and organic electroluminescen March 18, 2008
The present invention uses a substrate for an optical element comprising a light scattering unit that scatters visible light, and a light transmissive opening that transmits the visible light in a light transparent substrate transmitting the visible light, as a light extraction subst
7280029 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel October 9, 2007
A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled in an anti-ferromagnetic manner through the non-magnetic intermediate layer. Each ferro
7271698 Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel September 18, 2007
A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled in an antiferromagnetic manner through the non-magnetic intermediate layer. Each ferrom
7180235 Light-emitting device substrate with light control layer and light-emitting device using the sam February 20, 2007
A first layer having a refractive index higher than that of a light transparent substrate is formed on the light transparent substrate, and a second layer having a refractive index higher than that of the first layer is formed on the first layer, and an electrode layer having a refra
7099184 Magnetic random access memory August 29, 2006
An improved magnetic random access memory (MRAM) has two sets of signal lines where each set is substantially perpendicular to the other, and memory cells located at the intersections of the signal lines. Each memory cell has a magneto-resistant element containing a magnetization lay
6950290 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free lay September 27, 2005
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the
6914257 Magnetoresistive device and method of producing the same July 5, 2005
In accordance with a method of producing an MR (MagnetoResistive) device including a ferromagnetic tunnel junction made up of a first ferromagnetic layer, an insulation layer formed on the first ferromagnetic layer and a second ferromagnetic layer formed on the insulation layer, a metal
6819532 Magnetoresistance effect device exchange coupling film including a disordered antiferromagnetic November 16, 2004
A foundation layer increasing adhesive properties to a substrate, another foundation layer controlling orientation of an antiferromagnetic layer, the antiferromagnetic layer including a disordered alloy of IrMn, a pinning layer, and a cap protection layer are formed in the order on the
6639766 Magneto-resistance effect type composite head and production method thereof October 28, 2003
A magneto-resistance effect ("MR") type composite head includes a reproduction head with an MR element arranged between a first and a second magnetic shield; and a recording head arranged adjacent to the reproduction head so as to use the second magnetic shield as a first magnetic po
6542342 Magnetoresistive effect transducer having longitudinal bias layer directly connected to free lay April 1, 2003
In a magnetoresistive effect transducer including a pinning layer, a pinned layer, a free layer and a non-magnetic layer inserted between the pinned layer and the free layer, a longitudinal bias layer is connected directly to a part of the free layer to apply a bias magnetic field to the
6538861 MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A T March 25, 2003
A magnetoresistive head whose operation depends on a magnetoresistive effect is configured using a ferromagnetic tunnel junction (MTJ) film, which is arranged between a lower electrode and an upper electrode. The ferromagnetic tunnel junction film is basically configured using a set of
6493195 Magnetoresistance element, with lower electrode anti-erosion/flaking layer December 10, 2002
A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patte
6490139 Magneto-resistive element and magnetic head for data writing/reading December 3, 2002
A magneto-resistive element comprises a first electrode, a magneto-resistive layer formed on the first electrode in which resistance is changed in accordance with magnetic field, and a second electrode layer formed on the magneto-resistive layer. The magneto-resistive layer has a fir
6341053 Magnetic tunnel junction elements and their fabrication method January 22, 2002
The present invention provides a magnetic tunnel junction device for an external magnetic field sensor. The device comprises a stack of multi-layers, which include a first antiferromagnetic pinning layer, a ferromagnetic free layer, a tunneling barrier layer, a ferromagnetic pinned l
6333842 Magneto-resistance effect type composite head and production method thereof December 25, 2001
The present invention provides a magneto-resistance effect (hereinafter, referred to as MR) type composite head. The head includes a reproduction head including an MR element arranged between a first and a second magnetic shield; and a recording head arranged next to the reproduction
6174736 Method of fabricating ferromagnetic tunnel junction device January 16, 2001
There is provided a method of fabricating a ferromagnetic tunnel junction device, including the steps of (a) forming a first ferromagnetic layer on a substrate, (b) forming a tunnel barrier layer on the first ferromagnetic layer, (c) forming a second ferromagnetic layer on the tunnel bar
5948553 Magnetic multilayer structure having magnetoresistance ratio and large magnetic sensitivity base September 7, 1999
A spin valve type multilayered magnetic structure has Fe-base soft magnetic crystalline layer having a mean grain size equal to or less than 30 nanometers and sandwiching a non-magnetic spacer layer, and the Fe-base soft magnetic crystalline layer is expressed as Fe-M-B where M is at lea
5942309 Spin valve magnetoresistive device August 24, 1999
A spin valve magnetoresistive multi-layered structure includes a first type magnetic layer which magnetization is free to rotate in accordance with an external applied magnetic field, a non-magnetic spacer layer adjacent to said first type magnetic film, and a second type magnetic layer
5589278 Magnetoresistive thin-film and device December 31, 1996
Disclosed is a magnetoresistive thin-film, which a (110) oriented epitaxial buffer layer 2 made of a body-centered cubic crystalline metal or alloy is formed on a single crystalline substrate 1, thereon with layer a (110) oriented epitaxial Fe/Cr superlattice film on which Fe layers 3 an
5506063 Soft magnetic film of iron and process of formation thereof April 9, 1996
A soft magnetic film of single crystalline iron is epitaxially grown on a substrate, and the substrate is formed of single crystalline oxide with a major surface oriented to one of (100) direction, (110) direction and (111) direction so that the iron is never alloyed with the oxide and,
4549059 Wire bonder with controlled atmosphere October 22, 1985
In order to bond a fine metal wire of a high tensile strength or a low cost to an electrode of a semiconductor chip and an external lead of a semiconductor device package, either an inert gas or an inert gas containing a predetermined concentration of oxygen is made to flow through a










 
 
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