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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Kalnitsky; Alexander
Address:
Grenoble, FR
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
6645803 Method for modifying the doping level of a silicon layer November 11, 2003
A method for modifying the doping level of a doped silicon layer including the steps of coating the silicon layer with a silicide layer made of a refractory metal, and heating the interface region between the silicon and the silicide to a predetermined temperature. The method may be appl
5811330 Method of fabricating an overvoltage protection device in integrated circuits September 22, 1998
An overvoltage protection device, for inclusion within an integrated circuit, which comprises at least two conductive elements separated by a gas filled gap.
5786613 Integrated overvoltage protection device having electrodes separated by a gas-filled cavity July 28, 1998
An overvoltage protection device, for inclusion within an integrated circuit, which comprises at least two conductive elements separated by a gas filled gap.
5633178 Method of making volatile memory cell with interface charge traps May 27, 1997
A semiconductor device is described, incorporating electron traps at the interface between a semiconductor substrate and a gate dielectric layer of an insulated gate field effect transistor, such device being capable of retaining charge in the electron traps for a certain time, allowing
5608250 Volatile memory cell with interface charge traps March 4, 1997
A semiconductor device is described, incorporating electron traps at the interface between a semiconductor substrate and a gate dielectric layer of an insulated gate field effect transistor, such device being capable of retaining charge in the electron traps for a certain time, allowing










 
 
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