| Patent Number |
Title Of Patent |
Date Issued |
| 7544546 |
Formation of carbon and semiconductor nanomaterials using molecular assemblies |
June 9, 2009 |
| The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substr |
| 7531293 |
Radiation sensitive self-assembled monolayers and uses thereof |
May 12, 2009 |
| The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. T |
| 7491286 |
Patterning solution deposited thin films with self-assembled monolayers |
February 17, 2009 |
| The present invention provides a method of forming a patterned thin film on a surface of a substrate having thereon a patterned underlayer of a self-assembled monolayer. The method comprises depositing a thin film material on the self-assembled monolayer to produce a patterned thin film |
| 7445815 |
Process for preparing a film having alternating monolayers of a metal-metal bonded complex monol |
November 4, 2008 |
| The present invention provides a process for preparing a thin film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by-layer growth. The process comprises the steps of: (1) applying onto a surface of a substrate a first linker |
| 7405129 |
Device comprising doped nano-component and method of forming the device |
July 29, 2008 |
| A device comprising a doped semiconductor nano-component and a method of forming the device are disclosed. The nano-component is one of a nanotube, nanowire or a nanocrystal film, which may be doped by exposure to an organic amine-containing dopant. Illustrative examples are given fo |
| 7230335 |
Inspection methods and structures for visualizing and/or detecting specific chip structures |
June 12, 2007 |
| The present invention provides inspection methods and structures for facilitating the visualization and/or detection of specific chip structures. Optical or fluorescent labeling techniques are used to "stain" a specific chip structure for easier detection of the structure. Also, a te |
| 7189433 |
Process for preparing a film having alternatively monolayers of a metal-metal bonded complex mon |
March 13, 2007 |
| The present invention provides a process for preparing a thin film having alternating monolayers of a metal-metal bonded complex monolayer and an organic monolayer by layer-by-layer growth. The process comprises the steps of: (1) applying onto a surface of a substrate a first linker |
| 6887332 |
Patterning solution deposited thin films with self-assembled monolayers |
May 3, 2005 |
| The present invention provides a method of forming a patterned thin film on a surface of a substrate having thereon a patterned underlayer of a self-assembled monolayer. The method comprises depositing a thin film material on the self-assembled monolayer to produce a patterned thin film |
| 6646285 |
Molecular electronic device using metal-metal bonded complexes |
November 11, 2003 |
| The present invention provides a molecular device including a source region and a drain region, a molecular medium extending there between, and an electrically insulating layer between the source region, the drain region and the molecular medium. The molecular medium in the molecular dev |
| 6437422 |
Active devices using threads |
August 20, 2002 |
| Active devices that have either a thread or a ribbon geometry. The thread geometry includes single thread active devices and multiple thread devices. Single thread devices have a central core that may contain different materials depending upon whether the active device is responsive |
| 6180956 |
Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
January 30, 2001 |
| An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an o |
