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Inventor: Kagamihara; Masaki
Address: Kanagawa, JP
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432169 |
Method for manufacturing semiconductor device |
October 7, 2008 |
| An excessive etch in the conventional manufacturing process causes a roughened surface of a contact bottom, resulting in an increased variation in characteristics of semiconductor devices. A bipolar transistor having a collector region 4 provided in a bottom of a trench formed in a P |
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