| Patent Number |
Title Of Patent |
Date Issued |
| RE39975 |
Surface acoustic wave device and communication device |
January 1, 2008 |
| A surface acoustic wave device including a LiTaO.sub.3 substrate, and an interdigital transducer is provided on the LiTaO.sub.3 substrate. The interdigital transducer includes as a major component at least one of Au, Ag, Ta, Mo, Cu, Ni, Cr, Zn, and W, and the interdigital transducer has |
| 7626314 |
Surface acoustic wave device |
December 1, 2009 |
| A surface acoustic wave device which uses a Rayleigh wave as a surface acoustic wave includes an IDT electrode provided on a piezoelectric substrate composed of quartz having Euler angles of (0.degree..+-.5.degree., 0.degree. to 140.degree., 0.degree..+-.40.degree.), a piezoelectric |
| 7626313 |
Surface acoustic wave device |
December 1, 2009 |
| A surface acoustic wave device includes a LiNbO.sub.3 substrate having a plurality of grooves formed in the upper surface thereof, an IDT electrode formed by filling the grooves with a metal, and a SiO.sub.2 layer arranged to cover an upper surface of the LiNbO.sub.3 substrate and th |
| 7581306 |
Method for producing a boundary acoustic wave device |
September 1, 2009 |
| In a method for producing a boundary acoustic wave device that includes a first medium, a second medium, and a third medium laminated in that order, and electrodes disposed at the interface between the first medium and the second medium, the method includes the steps of preparing a l |
| 7569972 |
Surface acoustic wave device |
August 4, 2009 |
| A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO.sub.3 substrate having Euler angles of (0.degree..+-.5.degree., .theta..+-.5.degree., 0.degree..+-.10.degree.), an electrode which is disposed on the LiNbO.sub.3 substrate and which includes an IDT electrode pr |
| 7550898 |
Boundary acoustic wave device and process for producing same |
June 23, 2009 |
| In a method for producing a boundary acoustic wave device that includes a first medium, a second medium, and a third medium laminated in that order, and electrodes disposed at the interface between the first medium and the second medium, the method includes the steps of preparing a l |
| 7535152 |
Lamb wave device |
May 19, 2009 |
| A Lamb wave device includes a base substrate, a piezoelectric thin film which is provided on the base substrate and which has a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the |
| 7501293 |
Semiconductor device in which zinc oxide is used as a semiconductor material and method for manu |
March 10, 2009 |
| A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact l |
| 7425788 |
Surface acoustic wave device |
September 16, 2008 |
| In a surface acoustic wave device, a plurality of grooves are provided on a piezoelectric substrate, an electrode film defining an IDT electrode is formed by filling an electrode material in the grooves, an insulator layer, such as a SiO.sub.2 film, is arranged so as to cover the pie |
| 7418772 |
Method for manufacturing a surface acoustic wave |
September 2, 2008 |
| In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO.sub.3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. |
| 7411334 |
Surface acoustic wave apparatus and manufacturing method therefor |
August 12, 2008 |
| In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO.sub.3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. |
| 7394180 |
Oscillator circuit including surface acoustic wave sensor and biosensor apparatus |
July 1, 2008 |
| A surface-acoustic-wave-sensor-included oscillator circuit does not cause separation of an electrode film due to application of a bias voltage and can reliably accurate operate even if liquid is adhered thereto. The surface-acoustic-wave-sensor-included oscillator circuit includes in |
| 7345400 |
Surface acoustic wave device |
March 18, 2008 |
| In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO.sub.2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of ab |
| 7339304 |
Surface acoustic wave device |
March 4, 2008 |
| A surface acoustic wave device includes a piezoelectric substrate made of LiNbO.sub.3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily |
| 7327071 |
Surface acoustic wave device |
February 5, 2008 |
| A surface acoustic wave device includes a piezoelectric substrate made of LiTaO.sub.3 or LiNbO.sub.3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer |
| 7322093 |
Method for producing a boundary acoustic wave device |
January 29, 2008 |
| In a method for producing a boundary acoustic wave device that includes a first medium, a second medium, and a third medium laminated in that order, and electrodes disposed at the interface between the first medium and the second medium, the method includes the steps of preparing a l |
| 7315107 |
Surface acoustic wave device |
January 1, 2008 |
| A surface acoustic wave device includes a LiNbO.sub.3 substrate with a Euler angle in an area defined by a rectangle having four corners with coordinates (1) (0.degree., 7.degree., 101.degree.), (2) (0.degree., 23.degree., 79.degree.), (3) (0.degree., 23.degree., 79.degree.), and (4) |
| 7230365 |
Surface acoustic wave apparatus and manufacturing method therefor |
June 12, 2007 |
| In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO.sub.3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. |
| 7218039 |
Surface acoustic wave device |
May 15, 2007 |
| A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acousti |
| 7212080 |
Surface acoustic wave device having two piezoelectric substrates with different cut angles |
May 1, 2007 |
| A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided |
| 7209018 |
Surface acoustic wave device |
April 24, 2007 |
| In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO.sub.2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of ab |
| 7208860 |
Surface acoustic wave device |
April 24, 2007 |
| A surface acoustic wave device has a high electromechanical coefficient and reflection coefficient, and also has an improved frequency-temperature characteristic that is achieved by forming a SiO.sub.2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO.su |
| 7194793 |
Method for producing an edge reflection type surface acoustic wave device |
March 27, 2007 |
| A method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device includes the step of obtaining a frequency characteristic of an edge reflection type surface acoustic wave device having a piezoelectric substrate. The edge reflection type surface |
| 7180222 |
Surface acoustic wave device |
February 20, 2007 |
| A surface acoustic wave device includes a LiNbO.sub.3 substrate with a Euler angle in an area defined by a rectangle having four comers with coordinates (1) (0.degree., 7.degree., 101.degree.), (2) (0.degree., 23.degree., 79.degree.), (3) (0.degree., 23.degree., 79.degree.), and (4) |
| 7141909 |
Surface acoustic wave device |
November 28, 2006 |
| A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acousti |
| 7109634 |
End surface reflection type surface acoustic wave device |
September 19, 2006 |
| A surface acoustic wave device with improved reflection characteristics, in which an insulating film is formed so as to cover an electrode film, and the electrode film is made from Al or an Al alloy, includes a piezoelectric substrate, an electrode film which is formed of Al or an al |
| 7034433 |
Surface acoustic wave device |
April 25, 2006 |
| A surface acoustic wave device has a high electromechanical coefficient and reflection coefficient, and also has an improved frequency-temperature characteristic that is achieved by forming a SiO.sub.2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO.su |
| 7010837 |
Method for manufacturing an electronic component |
March 14, 2006 |
| A method for manufacturing an electronic component includes the steps of forming an electrode layer including .alpha.-tungsten on a substrate at a substrate temperature of about 100.degree. C. to about 300.degree. C. by a sputtering process, processing the electrode layer so as to have a |
| 7009468 |
Surface acoustic wave device and electronic device using the same |
March 7, 2006 |
| A small, high-performance SAW device has a large electromechanical coupling coefficient and a small number of fingers constituting reflectors, and is constructed such that losses due to electric resistance of the fingers. In the SAW device having pluralities of first fingers and seco |
| 6972508 |
Surface acoustic wave device |
December 6, 2005 |
| A surface acoustic wave device is constructed by forming a piezoelectric thin film on a quartz substrate, and in such a manner that the electromechanical coupling coefficient for a Rayleigh wave, K.sup.2, is enlarged. In this surface acoustic wave device, a piezoelectric thin film is |
| 6946930 |
Surface acoustic wave device and electronic device using the same |
September 20, 2005 |
| A reliable SAW device has excellent reflection and a small size, which is achieved by reducing the number of fingers defining reflectors, such that losses due to a large electromechanical coupling coefficient are small and the film thickness of electrodes has much less effect on frequenc |
| 6914498 |
Surface acoustic wave device on LiTaO3 substrate using primarily silver electrodes covered with |
July 5, 2005 |
| A surface acoustic wave device has a significantly improved frequency temperature characteristic due to the arrangement of a SiO.sub.2 film on an IDT such that cracking in the SiO.sub.2 film surface is prevented from occurring, desired characteristics are reliably achieved, the elect |
| 6879225 |
Surface acoustic wave device |
April 12, 2005 |
| A surface acoustic wave device includes a Y-cut, X-propagation LiTaO.sub.3 substrate, at least one interdigital transducer provided on the LiTaO.sub.3 substrate and made of Al or a metal containing Al as a major component, and an SiO.sub.2 film provided on the surface of the LiTaO.su |
| 6873226 |
Edge-reflection surface acoustic wave filter |
March 29, 2005 |
| An edge reflection surface acoustic wave filter includes IDTs disposed on a top surface of a piezoelectric substrate, and surface acoustic waves of the Shear Horizontal type are reflected between opposite edges. At least one outermost electrode finger in the direction of propagation of s |
| 6865786 |
Method for manufacturing a surface acoustic wave device using a shear horizontal type surface ac |
March 15, 2005 |
| In a method of manufacturing a surface acoustic wave device using a Shear Horizontal type surface acoustic wave, at least one interdigital transducer (IDT) is made of a material having a larger mass-load effect than that of aluminum. The metallization ratio of the IDT and the normali |
| 6847154 |
Surface acoustic wave device and communication device |
January 25, 2005 |
| A Shear Horizontal-type end-surface-reflection-type surface acoustic wave device includes a piezoelectric substrate having end surfaces. The most appropriate positions of the end surfaces of the piezoelectric substrate are determined. Interdigital transducers are disposed on the main sur |
| 6836196 |
Surface acoustic wave apparatus utilizing a leaky surface acoustic wave |
December 28, 2004 |
| A surface acoustic wave apparatus has an improved frequency temperature characteristic due to an arrangement of a SiO.sub.2 film on an IDT such that cracks in the SiO.sub.2 film surface are prevented from occurring, desired characteristics are reliably achieved, the electromechanical |
| 6831342 |
Optical device for converting incident light into a second harmonic |
December 14, 2004 |
| An optical device includes a substrate, dielectric layers disposed on portions of the substrate, and a piezoelectric layer disposed over the substrate and the dielectric layer, wherein the piezoelectric layer functions as a waveguide in which incident light is transmitted parallel to |
| 6826815 |
Method for manufacturing a surface acoustic wave device |
December 7, 2004 |
| A surface acoustic wave device includes a piezoelectric plate and at least one interdigital electrode provided on the piezoelectric plate. The interdigital electrode includes a first metallic thin film and a second metallic thin film laminated on the first metallic thin film and cont |
| 6810566 |
Method of manufacturing a surface acoustic wave element |
November 2, 2004 |
| A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of th |
| 6806796 |
End-surface reflection type surface acoustic wave filter |
October 19, 2004 |
| An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using |
| 6789297 |
Method of manufacturing a surface acoustic wave element |
September 14, 2004 |
| A method of manufacturing a surface acoustic wave element includes the steps of providing a piezoelectric body having an interdigital transducer, where the interdigital transducer is made of a metal having a higher density than the piezoelectric body, and performing ion bombardment of th |
| 6784764 |
End-surface reflection type surface acoustic wave filter |
August 31, 2004 |
| An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using |
| 6781282 |
Longitudinally coupled resonator-type surface acoustic wave device |
August 24, 2004 |
| A longitudinally coupled resonator-type surface acoustic wave device includes interdigital transducers including a plurality of electrode fingers disposed along the propagation direction of a surface acoustic wave on a surface acoustic wave device. An electrically discontinuous porti |
| 6733895 |
ZnO film, method for manufacturing the same, and luminescent element including the same |
May 11, 2004 |
| A p-type ZnO film is formed on a sapphire substrate by RF magnetron sputtering in an atmosphere of a mixture of Ar and N.sub.2 gases, using a Zn metal target doped with Y.sub.2 O.sub.3. The p-type ZnO film can be easily formed even on a large-sized substrate. |
| 6731044 |
Surface acoustic wave device having an interdigital transducer provided on a main region of a pi |
May 4, 2004 |
| A surface acoustic wave device includes a piezoelectric substrate having a pair of substrate edges and an upper surface therebetween. The piezoelectric substrate has at least one inner edge which is in contact with a main region and extends from the upper surface toward a bottom surf |
| 6717327 |
Surface acoustic wave device |
April 6, 2004 |
| A surface acoustic wave device includes a piezoelectric thin film arranged on a quartz substrate, and the quartz substrate has Euler angles (.phi., .theta., .psi.) which satisfy -19.degree.<.phi.<+15.degree., 107.degree.<.theta.<125.degree. and -10.degree.<.psi.<15. |
| 6710509 |
Surface acoustic wave device |
March 23, 2004 |
| A surface acoustic wave device includes a quartz substrate, a piezoelectric thin film disposed on the quartz substrate and an interdigital electrode in contact with the piezoelectric thin film. The quartz substrate has an angle .phi. at the Euler angle (0, .phi., .theta.) which is select |
| 6703760 |
Surface acoustic wave device and communication apparatus |
March 9, 2004 |
| A surface acoustic wave device includes a piezoelectric substrate, a first interdigital transducer, a second interdigital transducer and a first coupler. The first and second interdigital transducers are arranged on the surface of the piezoelectric substrate such that the second interdig |
| 6670739 |
Surface acoustic wave apparatus |
December 30, 2003 |
| A SAW apparatus includes a plurality of IDTs disposed on a piezoelectric substrate, and an edge-reflection-type SAW device in which surface acoustic waves are reflected by the edge surfaces of the piezoelectric substrate. The SAW device is housed in a package. On the top of a first m |
