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Inventor: K. O. Kenneth
Address: Cambridge, MA
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 5028977 |
Merged bipolar and insulated gate transistors |
July 2, 1991 |
| A vertical bipolar transistor is formed along with an IGFET transistor in a process in which the bipolar transistor collector, base and emitter structure is formed in the body of a semiconductor mesa-like structure while the IGFET transistor is formed in and along one of the sidewalls of |
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