Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Jung; Yun-Ho
Address:
Seoul, KR
No. of patents:
46
Patents:












Patent Number Title Of Patent Date Issued
7879664 Liquid crystal display device having drive circuit February 1, 2011
A fabricating method of an array substrate for a liquid crystal display device including forming a polycrystalline silicon film on a substrate having a display region and a peripheral region, the polycrystalline silicon film having grains of square shape, forming a first active layer
7816196 Laser mask and crystallization method using the same October 19, 2010
An embodiment of a laser crystallization method includes providing a substrate on which an amorphous silicon thin film is deposited, positioning a laser mask over the substrate, the laser mask including a mask pattern that contains transmitting regions and a blocking region, irradiat
7759605 Method of deciding focal plane and method of crystallization using thereof July 20, 2010
A crystallization method and system are provided which improve a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loadin
7758926 Amorphous silicon deposition for sequential lateral solidification July 20, 2010
An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from about 600 to about 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to comple
7728256 Silicon crystallization apparatus and silicon crystallization method thereof June 1, 2010
A novel silicon crystallization apparatus and a silicon crystallization method renders it is possible to form alignment key without additional photolithography, and to adjust a substrate to a correct position by sensing a deviation of the substrate when the substrate is loaded. The s
7700892 Sequential lateral solidification device and method of crystallizing silicon using the same April 20, 2010
A sequential lateral solidification device and a method of crystallizing silicon using the same controls a size and arrangement overlapping areas of laser beam patterns adjacently irradiated onto a substrate to within specific regions of a pixel area and a driving area outside the pixel
7696449 Silicon crystallizing device April 13, 2010
A silicon crystallizing device includes a laser beam source emitting a laser beam, a projector unit converging and changing a pattern of the laser beam from the laser beam source, a stage loading/unloading a substrate, a mirror deflecting the laser beam from the projector unit to an
7674664 Method of fabricating liquid crystal display device having drive circuit March 9, 2010
A fabricating method of an array substrate for a liquid crystal display device including forming a polycrystalline silicon film on a substrate having a display region and a peripheral region, the polycrystalline silicon film having grains of square shape, forming a first active layer
7651567 Mask for sequential lateral solidification and crystallization method using thereof January 26, 2010
A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a firs
7635412 Crystallizing silicon using a laser beam transmitted through a mask December 22, 2009
An laser crystallization device and a method for crystallizing silicon by using the same is disclosed, to carry out the crystallization process at both the X-axis and Y-axis directions without rotation of a stage, wherein the laser crystallization device is includes a mask including
7569793 Sequential lateral solidification device and method of crystallizing silicon using the same August 4, 2009
A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed in parallel to an i
7569307 Laser mask and crystallization method using the same August 4, 2009
A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a
7553366 Laser beam pattern mask and crystallization method using the same June 30, 2009
A laser beam pattern mask includes at least one or more transmitting parts, each transmitting part having a central portion and a pair of edge portions provided to both sides of the central portion, each having a substantially triangular shape defined by a virtual boundary line between
7482552 Laser crystallizing device and method for crystallizing silicon January 27, 2009
A laser crystallizing device including a mask divided into two regions, having open parts of the same shape at complementary positions; and a light-shielding pattern selectively leaving one region of the mask open and masking the other region.
7399685 Laser beam pattern mask and crystallization method using the same July 15, 2008
A laser beam pattern mask includes an opaque substrate and a plurality of transmission portions formed in the substrate to transmit light, wherein each of the transmission portions extend in a first direction while being uniformly spaced apart from one another by a predetermined distance
7357963 Apparatus and method of crystallizing amorphous silicon April 15, 2008
A sequential lateral solidification apparatus includes a laser generator for generating and emitting a laser beam; an X-Y stage movable in two orthogonal axial directions; and a mask arranged between the laser generator and the X-Y stage. The mask has a plurality of slits through whi
7335260 Laser annealing apparatus February 26, 2008
A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed.During the laser annealing, a vacuum chuck holds t
7329936 Mask for sequential lateral solidification and crystallization method using thereof February 12, 2008
A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a firs
7326876 Sequential lateral solidification device February 5, 2008
A sequential lateral solidification device, for enhancing optical characteristics of the device and for preventing damage caused by an ablation of a crystallization thin film, is disclosed. The device includes a laser light source generating a laser beam, a projection lens focusing t
7312471 Liquid crystal display device having drive circuit and fabricating method thereof December 25, 2007
A thin film transistor and a fabricating method of a thin film transistor for a liquid crystal display device includes forming a polycrystalline silicon film on a substrate, the polycrystalline silicon film having square shaped grains; forming an active layer by etching the polycryst
7253010 Method of deciding focal plane and method of crystallization using thereof August 7, 2007
A crystallization method is provided which improves a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test ma
7205076 Mask for laser irradiation and apparatus for laser crystallization using the same April 17, 2007
A laser beam mask for shaping a laser beam includes a base substrate having first and second surfaces and having at least one first open portion, and a reflecting layer on the first surface of the base substrate, wherein the reflecting layer has at least one second open portion corre
7193240 Sequential lateral solidification mask with stripe-shaped portions for transmitting laser light March 20, 2007
A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon are provided. The mask includes a light absorptive portion for blocking a laser beam and a plurality of stripe-shaped light transmitting portions for passing the laser beam. Eac
7192627 Amorphous silicon deposition for sequential lateral solidification March 20, 2007
An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from 600 to 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to completely melt us
7132204 Laser beam pattern mask and crystallization method using the same November 7, 2006
A laser beam pattern mask includes at least one or more transmitting parts, each transmitting part having a central portion and a pair of edge portions provided to both sides of the central portion, each having a substantially triangular shape defined by a virtual boundary line between
7132202 Mask for laser irradiation, method of manufacturing the same, and apparatus for laser crystalliz November 7, 2006
A mask for laser irradiation includes a base substrate, a laser beam shielding pattern on a first surface of the base substrate, wherein the laser beam shielding pattern is made of an opaque metallic material and has laser beam transmitting portions spaced apart from each other, and an
7115456 Sequential lateral solidification device and method of crystallizing silicon using the same October 3, 2006
A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed in parallel to an i
7071082 Silicon crystallization method July 4, 2006
Sequential lateral solidification (SLS) crystallization of amorphous silicon using a mask having striped light transmitting portions. An amorphous silicon bearing substrate is located in an SLS apparatus. The amorphous silicon film is functionally divided into a driving region (for d
6867151 Mask for sequential lateral solidification and crystallization method using thereof March 15, 2005
A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a first
6852162 Laser annealing apparatus February 8, 2005
A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a vacuum chuck holds the
6825493 Silicon crystallization method November 30, 2004
Sequential lateral solidification (SLS) crystallization of amorphous silicon using a mask having striped light transmitting portions. An amorphous silicon bearing substrate is located in an SLS apparatus. The amorphous silicon film is functionally divided into a driving region (for d
6755909 Method of crystallizing amorphous silicon using a mask June 29, 2004
A sequential lateral solidification mask having a first region with a plurality of first stripes that are separated by a plurality of first slits. The mask further includes a second region having a plurality of second stripes separated by a plurality of second slits. The second strip
6736895 Silicon crystallization method May 18, 2004
A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon are provided. The mask includes a light absorptive portion for blocking a laser beam and a plurality of stripe-shaped light transmitting portions for passing the laser beam. Each
6706545 Method of fabricating a liquid crystal display March 16, 2004
The present invention relates to a method of fabricating a liquid crystal display panel that involves patterning a silicon film crystallized by sequential lateral solidification. The method comprises the steps of preparing a silicon film, crystallizing the silicon film by growing sil
6537863 Laser beam scanning method March 25, 2003
A laser beam scanning method for irradiating a large-area silicon film with a laser beam by scanning the beam two or more times across the film to provide laser energy to the entire film. The laser beam has an elongated shape and a energy profile in the longitudinal direction which is
6536237 Laser annealing system March 25, 2003
The present invention relates to a laser annealing system which reduces damages and contamination to a chamber window by adding a buffer window between the chamber window and a silicon film being annealed by a laser beam. The laser annealing system includes a chamber window for passing a
6521473 Method of fabricating a liquid crystal display February 18, 2003
The present invention relates to a method of fabricating a liquid crystal display panel that involves patterning a silicon film crystallized by sequential lateral solidification. The method comprises the steps of preparing a silicon film, crystallizing the silicon film by growing sil
6514339 Laser annealing apparatus February 4, 2003
A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a vacuum chuck holds the
6489188 Laser annealing system for crystallization of semiconductor layer and method of the same December 3, 2002
The present invention discloses a method for forming a polycrystalline semiconductor layer on a substrate at an atmospheric pressure, including: providing a chamber having an opening portion and a stage therein; forming an amorphous semiconductor layer on the substrate; positioning the
6475872 Polysilicon thin film transistor and method of manufacturing the same November 5, 2002
The present invention discloses a method of manufacturing a thin film transistor for use in a liquid crystal display device in which includes crystallizing an amorphous silicon layer formed over a substrate using a first SLS (sequential lateral solidification) laser annealing technique t
6346462 Method of fabricating a thin film transistor February 12, 2002
A method of fabricating a thin film transistor with a silicon film crystallized by sequential lateral solidification including depositing an amorphous silicon film on an insulating substrate, selectively doping the amorphous silicon film with impuities, crystalizing the amorphous silicon
6335509 Laser annealing apparatus January 1, 2002
The present invention relates to a laser annealing apparatus having a plurality of optical systems to generate a plurality of laser beams. A process time is reduced because a laser scanning operation on a large substrate is completed in a shorter time. The present invention includes a
6326286 Method for crystallizing amorphous silicon layer December 4, 2001
An active layer commonly used in a thin-film-transistor is made by irradiating an amorphous silicon layer with a laser source at an energy density sufficient to induce substantially complete melting to form a melted region and an unmelted region. The melted region of the amorphous si
6323457 Laser annealing apparatus November 27, 2001
A laser annealing apparatus has a laser generating section for producing a laser beam, a splitter arranged to partially reflect and partially transmit the laser beam. The apparatus has a first energy converting section for measuring the energy value of the laser beam reflected from t
6316338 Laser annealing method November 13, 2001
A laser annealing method for crystallizing a silicon film includes preparing a laser beam having a width smaller than a predetermined width that is two times longer than a silicon grain grown by a single shot of the laser beam in which energy of the laser beam is determined to melt d
6177301 Method of fabricating thin film transistors for a liquid crystal display January 23, 2001
A method of fabricating a thin film transistor (TFT) for a liquid crystal display (LCD) device having a drive circuit and a pixel array formed on the same substrate. The method includes forming a polycrystalline silicon layer by growing silicon grains from an amorphous silicon layer usin










 
 
  Recently Added Patents
Method and system for monitoring and treating hemodynamic parameters
Deflection device for a scanner with Lissajous scanning
Pyridyldiamido transition metal complexes, production and use thereof
Differentiated PSIP table update interval technology
Spalling utilizing stressor layer portions
Method for treating wounds for mammals, wound healer compound, and method of manufacturing thereof
Power surface mount light emitting die package
  Randomly Featured Patents
Disubstituted piperazines
Method for design and selection of efficacious antisense oligonucleotides
Sound-based focus system and focus method thereof
Circuit configuration for burn-in systems for testing modules by using a board
Hyper-spectral imaging and analysis of a sample of matter, and preparing a test solution or suspension therefrom
Microbend fiber-optic temperature sensor
Solar still
System and method for enhancing confocal reflectance images of tissue specimens
Endoprostheses and methods of manufacture
Human chitinase, its recombinant production, its use for decomposing chitin, its use in therapy or prophylaxis against infection diseases