| Patent Number |
Title Of Patent |
Date Issued |
| 7588996 |
Oxide pattern forming method and patterning method of semiconductor device |
September 15, 2009 |
| An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0.times.10.sup.16 atoms/cm.sup.2 onto the oxide layer in a given region, and wet-etching the oxide layer in the remaining region where the boron ion |
| 7576339 |
Ion implantation apparatus and method for obtaining non-uniform ion implantation energy |
August 18, 2009 |
| An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a |
| 7554106 |
Partial ion implantation apparatus and method using bundled beam |
June 30, 2009 |
| An ion implantation apparatus comprises an ion beam source for generating an initial ion beam, a bundled ion beam generator adapted to change the initial ion beam into a bundled ion beam based on a predetermined frequency to pass the bundled ion beam for a first time while passing the |
| 7529116 |
Memory device having a threshold voltage switching device and a method for storing information i |
May 5, 2009 |
| Disclosed herein is a memory device having an increased level of integration with a simplified method of manufacture. The memory device includes: a plurality of word lines and a plurality of bit lines each regularly arranged, and a plurality of unit memory cells each formed at an int |
| 7511337 |
Recess gate type transistor |
March 31, 2009 |
| A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gat |
| 7488959 |
Apparatus and method for partial ion implantation |
February 10, 2009 |
| Disclosed herein is an apparatus and method for partial ion implantation. The apparatus includes a wafer support, an ion beam irradiator capable of generating and irradiating an ion beam entering the wafer, and an ion beam exposure adjustor to adjust exposure of the wafer with respect to |
