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Inventor:
Jones; David P
Address:
Penarth, GB
No. of patents:
1
Patents:












Patent Number Title Of Patent Date Issued
7081388 Self aligned contact structure for trench device July 25, 2006
A fabrication process for a trench type power semiconductor device includes forming a mask layer with openings over a semiconductor surface. Through the openings of the mask, trenches with gates are then formed in the semiconductor body. Thereafter, insulation plugs are formed atop the










 
 
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