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Inventor: Jones; David P
Address: Penarth, GB
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7081388 |
Self aligned contact structure for trench device |
July 25, 2006 |
| A fabrication process for a trench type power semiconductor device includes forming a mask layer with openings over a semiconductor surface. Through the openings of the mask, trenches with gates are then formed in the semiconductor body. Thereafter, insulation plugs are formed atop the |
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