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Inventor:
Jiang; Ryan Hsin-Chin
Address:
Taipei, TW
No. of patents:
17
Patents:












Patent Number Title Of Patent Date Issued
8237193 Lateral transient voltage suppressor for low-voltage applications August 7, 2012
A lateral transient voltage suppressor for low-voltage applications. The suppressor includes an N-type heavily doped substrate and at least two clamp diode structures horizontally arranged in the N-type heavily doped substrate. Each clamp diode structure further includes a clamp well
8232601 Transient voltage suppressors July 31, 2012
The present invention relates a transient voltage suppressor (TVS) for directional ESD protection. The TVS includes: a conductivity type substrate; a first type lightly doped region, having a first type heavily doped region arranged therein; a second type lightly doped region, having
8217462 Transient voltage suppressors July 10, 2012
The present invention relates a transient voltage suppressor (TVS) for directional ESD protection. The TVS includes: a conductivity type substrate; a first type lightly doped region, having a first type heavily doped region arranged therein; a second type lightly doped region, having
8217421 ESD protection device with vertical transistor structure July 10, 2012
A new ESD protection device with an integrated-circuit vertical transistor structure is disclosed, which includes a heavily doped p-type substrate (P.sup.+ substrate), a n-type well (N well) in the P.sup.+ substrate, a heavily doped p-type diffusion (P.sup.+ diffusion) in the N well,
8169000 Lateral transient voltage suppressor with ultra low capacitance May 1, 2012
A lateral transient voltage suppressor with ultra low capacitance is disclosed. The suppressor comprises a first conductivity type substrate and at least one diode cascade structure arranged in the first conductivity type substrate. The cascade structure further comprises at least on
8049247 Asymmetric bidirectional silicon-controlled rectifier November 1, 2011
The present invention discloses an asymmetric bidirectional silicon-controlled rectifier, which comprises: a second conduction type substrate; a first conduction type undoped epitaxial layer formed on the substrate; a first well and a second well both formed inside the undoped epitax
7915638 Symmetric bidirectional silicon-controlled rectifier March 29, 2011
The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a second well, which are sequentially formed on the buried layer side-by-side; a first semic
7889470 ESD protection circuit with active triggering February 15, 2011
An ESD protection circuit is provided. The circuit includes a discharging component, a diode, and an ESD detection circuit. The discharging component is coupled between an input/output pad and a first power line of an IC. The diode is coupled between the input/output pad and a second
7817390 Power-rail ESD protection circuit with ultra low gate leakage October 19, 2010
An ESD protection circuit including a clamping module and a detecting module is provided. The clamping module is coupled between a positive power line and a negative power line. The detecting module includes a triggering unit, a resistor, and a MOS capacitor. An output terminal of th
7817386 ESD protection circuit for IC with separated power domains October 19, 2010
An ESD protection circuit suitable for applying in an integrated circuit with separated power domains is provided. The circuit includes a P-type MOSFET coupled between a first circuit in a first power domain and a second circuit in a second power domain. A source terminal of the P-type
7786504 Bidirectional PNPN silicon-controlled rectifier August 31, 2010
The present invention discloses a bidirectional PNPN silicon-controlled rectifier comprising: a p-type substrate; a N-type epitaxial layer; a P-type well and two N-type wells all formed inside the N-type epitaxial layer with the two N-type wells respectively arranged at two sides of the
7755871 Power-rail ESD protection circuit with ultra low gate leakage July 13, 2010
An ESD protection circuit including a clamping module and a detecting module is provided. The clamping module is coupled between a positive power line and a negative power line. The detecting module includes a triggering unit, a resistor, and a MOS capacitor. An output terminal of th
7705404 Electrostatic discharge protection device and layout thereof April 27, 2010
An electrostatic discharge (ESD) protection device and a layout thereof are provided. A bias conducting wire is mainly used to couple each base of a plurality of parasitic transistors inside ESD elements together, in order to simultaneously trigger all the parasitic transistors to bypass
7656627 ESD protection circuit with active triggering February 2, 2010
An ESD protection circuit is provided. The circuit includes a discharging component, a diode, and an ESD detection circuit. The discharging component is coupled between an input/output pad and a first power line of an IC. The diode is coupled between the input/output pad and a second
7652511 Slew-rate control circuitry with output buffer and feedback January 26, 2010
The present invention proposed a slew-rate control circuitry without the use of external components such as amplifiers. Therefore slew-rate control circuitry of the present invention not only provides an IC with build-in slew-rate control, but also reduces number of transistors used
7598797 Charge pump circuit with bipolar output October 6, 2009
A charge pump circuit with bipolar output comprises a first set of switch device capable of selectively connecting two terminals of a first transfer capacitor to a voltage source and a ground terminal, respectively, a second set of switch device capable of selectively connecting the
7564317 High/low voltage tolerant interface circuit and crystal oscillator circuit July 21, 2009
A high/low voltage tolerant interface circuit and a crystal oscillator circuit using the same are provided herein. The interface circuit includes a first transistor, a bulk-voltage generator module and an bias module. The first transistor includes a gate, a first source/drain, a bulk










 
 
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