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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Jeong; Chang-Oh
Address:
Kyungki-do, KR
No. of patents:
5
Patents:




Patent Number Title Of Patent Date Issued
RE40162 Thin film transistor array substrate for a liquid crystal display March 25, 2008
A thin film transistor substrate for a liquid crystal display includes an insulating substrate, and a gate line assembly formed on the substrate. The gate line assembly has a double-layered structure with a lower layer exhibiting good contact characteristics with respect to indium tin ox
7362402 Wires for liquid crystal display and liquid crystal display having the same April 22, 2008
A wire for a liquid crystal display has a dual-layered structure comprising a first layer made of molybdenum or molybdenum alloy, and a second layer made of molybdenum nitride or molybdenum alloy nitride. To manufacture the wire, a layer made of either a molybdenum or a molybdenum al
7173683 Wire for liquid crystal displays, liquid crystal displays having the same, and manufacturing met February 6, 2007
A wire for a liquid crystal display has a dual-layered structure comprising a first layer made of molybdenum or molybdenum alloy, and a second layer made of molybdenum nitride or molybdenum alloy nitride. To manufacture the wire, a layer made of either a molybdenum or a molybdenum al
6586286 Method for fabricating thin film transistor array substrate for liquid crystal display July 1, 2003
A thin film transistor substrate for a liquid crystal display includes an insulating substrate, and a gate line assembly formed on the substrate. The gate line assembly has a double-layered structure with a lower layer exhibiting good contact characteristics with respect to indium tin ox
6380559 Thin film transistor array substrate for a liquid crystal display April 30, 2002
A thin film transistor substrate for a liquid crystal display includes an insulating substrate, and a gate line assembly formed on the substrate. The gate line assembly has a double-layered structure with a lower layer exhibiting good contact characteristics with respect to indium tin ox


 
 
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